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onsemi Silicon Junction Switching Diode Single, 1 A Forward Current, 100 V Peak Reverse Voltage, DO-214AC Package S1B
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.2mm |
| Length | 4.75mm |
| Model | S1B |
| Width | 2.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214AC |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.1V |
| Peak Reverse Recovery Time trr | 1.8μs |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 100V |
Key Features
- This diode has a maximum forward voltage drop of 1.1 V ensuring efficient performance.
- Peak reverse recovery time is 1.8 microseconds, suitable for fast switching applications.
- Operating temperature ranges from -55°C to 150°C for reliability in various environments.
- Designed as a single silicon junction diode for discrete semiconductor circuits.
- Peak non-repetitive forward surge current up to 30 A supports transient surge conditions.
- Surface mount package type DO-214AC facilitates automated assembly processes.
- Non-automotive standard component, providing industry standard quality for electronics design.
Product Description
onsemi S1B silicon junction switching diode is designed for high efficiency in discrete semiconductor applications requiring reliable switching performance. Its maximum forward current of 1 A and peak reverse voltage of 100 V make it an excellent component for rectification, signal modulation, and protection circuits.
The diode's surface mount DO-214AC package ensures easy integration on densely populated printed circuit boards, while compact physical dimensions of 4.75 mm length, 2.95 mm width, and 2.2 mm height save valuable space.
With a peak reverse recovery time of only 1.8 microseconds, the S1B model delivers rapid switching suitable for power electronics and signal processing. Its wide operating temperature range from -55 to 150°C guarantees dependable operation in demanding industrial, automotive, and consumer electronic environments.
The diode supports a peak non-repetitive forward surge current of 30 A, making it resilient to power surges during transient conditions. This single silicon junction diode serves effectively in circuits requiring rectification, switching, and voltage regulation tasks.
Maximum forward current: 1 A. Peak reverse voltage: 100 V. Peak reverse recovery time: 1.8 μs. Package type: DO-214AC surface mount. Operating temperature: -55°C to 150°C. Physical dimensions: 4.75 mm x 2.95 mm x 2.2 mm.
Peak surge current: 30 A. Non-automotive standard component. This diode is suited for industrial, electronics manufacturing, power supply, and control system applications. Explore more semiconductor components in the onsemi product range and other Switching Diodes available at EnvMart.
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Frequently Asked Questions
The maximum forward current of this diode is 1 A.
It has a peak reverse voltage rating of 100 V.
The peak reverse recovery time is 1.8 microseconds.
The dimensions of the DO-214AC package are 4.75 mm in length, 2.95 mm in width, and 2.2 mm in height.
The operating temperature range is from -55°C to 150°C.
The diode supports a peak non-repetitive forward surge current of 30 A.
This model has a single diode configuration.
The maximum forward voltage drop is 1.1 V.
Yes, the surface mount type DO-214AC package facilitates automated assembly processes.
This diode is suitable for rectification, signal modulation, and protection circuits in various electronic applications.
The country of origin for this diode is India.
The diode has a pin count of 2.
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