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STMicroelectronics MDmesh M5 N-Channel MOSFET, 8.5 A, 650 V Enhancement, 3-Pin TO-220 STF12N65M5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF12N65M5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.5A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 430mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- The device features an Enhancement mode channel type with low on-resistance of 430 milliohms.
- Operates effectively in harsh temperature ranges from -55°C to 150°C.
- Equipped with 3 pins in a TO-220 package, suitable for through-hole mounting.
- Has a maximum power dissipation rating of 25 W for efficient heat handling.
- The gate charge is 20 nC at Vgs, enabling fast switching performance.
- Maximum gate-source voltage is 25 V ensuring safe operation limits.
- Forward voltage drop is 1.5 V, reducing conduction losses.
- Compact dimensions with length 10.4 mm, width 4.6 mm, and height 16.4 mm.
Product Description
STMicroelectronics STF12N65M5 is a high-performance N-Channel MDmesh™ M5 Power MOSFET optimized for power factor correction (PFC) and pulse width modulation (PWM) applications. This MOSFET type is designed for efficient hard switching, providing low on-state losses and reduced gate charge, making it ideal for energy-conscious industrial electronics.
The device is rated for a maximum continuous drain current of 8.5 A and a drain-source voltage of 650 V, suitable for demanding power applications such as solar power converters, power supplies for consumer electronics, and electronic lighting controls. The device's rugged design supports operation from -55°C up to 150°C, ensuring reliable performance in industrial and commercial environments.
Packaged in a standard 3-pin TO-220 through-hole format, the MOSFET is easy to integrate into existing PCB designs with efficient heat dissipation capabilities. The typical gate charge of 20 nC at gate-source voltage enables fast switching speeds, improving efficiency in PWM control circuits.
The MDmesh M5 series is recognized for its low forward voltage of 1.5 V, minimizing conduction losses and enhancing overall device efficiency. With dimensions of 10.4 mm length, 4.6 mm width, and 16.4 mm height, the compact form factor suits a variety of power electronics layouts.
Low on-resistance combined with high voltage and current handling capability. Robust performance for industrial, solar energy, and electronic lighting applications. High-speed switching with low gate charge enhancing efficiency.
Durable operation over wide temperature ranges provides long-term reliability. Standard TO-220 package for easy assembly and thermal management.
This product is categorized under discrete semiconductors for power electronics in manufacturing, industrial automation, energy, and commercial systems. EnvMart offers access to this MOSFET with assured quality and technical support for professional applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.5 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
The maximum drain-source resistance (Rds) is 430 milliohms.
The dimensions of the TO-220 package are 10.4 mm in length, 4.6 mm in width, and 16.4 mm in height.
It operates effectively in a temperature range from -55°C to 150°C.
The typical gate charge at gate-source voltage (Vgs) is 20 nC.
The maximum power dissipation rating for this device is 25 W.
The forward voltage drop is 1.5 V, which helps reduce conduction losses.
This model supports through-hole mounting due to its TO-220 package.
It features an N-channel type with enhancement mode.
This MOSFET is suitable for power factor correction (PFC) and pulse width modulation (PWM) applications.
The maximum gate-source voltage for safe operation is 25 V.
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