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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB55NF06LT4 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 95W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STB55NF06LT4 is a high-performance N-Channel STripFET II MOSFET designed for power switching and amplification applications. With a maximum continuous drain current of 55 A and drain-source voltage of 60 V, this 3-pin TO-263 package device offers ultra-low gate charge and low on-resistance to enhance efficiency and reduce power loss.
The MOSFET operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial, automotive, and power management uses. Its maximum power dissipation rating of 95 W supports robust performance in high-power circuits.
The device features a typical gate charge of 27 nC at Vgs and a maximum gate-source voltage rating of ±16 V, allowing precise gate control and fast switching speeds. The forward voltage is low at 1.6 V, with a maximum drain-source resistance of 20 mΩ to minimize conduction losses.
Its compact TO-263 surface mount package measuring 10.75 mm by 10.4 mm by 4.6 mm supports space-efficient PCB layouts and reliable thermal management. Designed by STMicroelectronics, this component is an ideal choice for engineers seeking efficient and durable power MOSFETs for electronics, industrial control, and automotive power regulation applications.
Features ultra-low gate charge and low on-resistance for efficient switching. Three-pin TO-263 surface mount package type for easy PCB integration. Supports maximum power dissipation of 95 W with a maximum operating temperature of 175°C.
Ideal for power management applications requiring high current and voltage handling. Operates within a temperature range from -55°C minimum to 175°C maximum. Typical gate charge at Vgs is 27 nC, with ±16 V maximum gate-source voltage.
Provides a forward voltage of 1.6 V and low drain-source resistance of 20 mΩ. Compact dimensions around 10.75 mm length, 10.4 mm width, and 4.6 mm height.
This MOSFET is widely used in industrial, automotive, electronics design and manufacturing, and power supply systems. It offers reliable, high-performance switching in compact form factor designs. Explore more STMicroelectronics discrete semiconductor products and MOSFETs on EnvMart for comprehensive industrial and commercial applications.
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