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STMicroelectronics STripFET II N-Channel MOSFET 55 A 60 V Enhancement 3-Pin TO-263 STB55NF06LT4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 4.6mm
Length 10.75mm
Model STB55NF06LT4
Width 10.4mm
Mount Type Surface
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 55A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 20mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 95W
Typical Gate Charge Qg @ Vgs 27nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.6V

Key Features

  • Features ultra-low gate charge and low on-resistance for efficient switching.
  • Three-pin TO-263 surface mount package type for easy PCB integration.
  • Supports maximum power dissipation of 95 W with a maximum operating temperature of 175°C.
  • Ideal for power management applications requiring high current and voltage handling.
  • Operates within a temperature range from -55°C minimum to 175°C maximum.
  • Typical gate charge at Vgs is 27 nC, with ±16 V maximum gate-source voltage.
  • Provides a forward voltage of 1.6 V and low drain-source resistance of 20 mΩ.
  • Compact dimensions around 10.75 mm length, 10.4 mm width, and 4.6 mm height.

Product Description

STMicroelectronics STB55NF06LT4 is a high-performance N-Channel STripFET II MOSFET designed for power switching and amplification applications. With a maximum continuous drain current of 55 A and drain-source voltage of 60 V, this 3-pin TO-263 package device offers ultra-low gate charge and low on-resistance to enhance efficiency and reduce power loss.

The MOSFET operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial, automotive, and power management uses. Its maximum power dissipation rating of 95 W supports robust performance in high-power circuits.

The device features a typical gate charge of 27 nC at Vgs and a maximum gate-source voltage rating of ±16 V, allowing precise gate control and fast switching speeds. The forward voltage is low at 1.6 V, with a maximum drain-source resistance of 20 mΩ to minimize conduction losses.

Its compact TO-263 surface mount package measuring 10.75 mm by 10.4 mm by 4.6 mm supports space-efficient PCB layouts and reliable thermal management. Designed by STMicroelectronics, this component is an ideal choice for engineers seeking efficient and durable power MOSFETs for electronics, industrial control, and automotive power regulation applications.

Features ultra-low gate charge and low on-resistance for efficient switching. Three-pin TO-263 surface mount package type for easy PCB integration. Supports maximum power dissipation of 95 W with a maximum operating temperature of 175°C.

Ideal for power management applications requiring high current and voltage handling. Operates within a temperature range from -55°C minimum to 175°C maximum. Typical gate charge at Vgs is 27 nC, with ±16 V maximum gate-source voltage.

Provides a forward voltage of 1.6 V and low drain-source resistance of 20 mΩ. Compact dimensions around 10.75 mm length, 10.4 mm width, and 4.6 mm height.

This MOSFET is widely used in industrial, automotive, electronics design and manufacturing, and power supply systems. It offers reliable, high-performance switching in compact form factor designs. Explore more STMicroelectronics discrete semiconductor products and MOSFETs on EnvMart for comprehensive industrial and commercial applications.

STMicroelectronics STripFET II N-Channel MOSFET 55 A 60 V Enhancement 3-Pin TO-263 STB55NF06LT4
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Frequently Asked Questions

The maximum continuous drain current for this model is 55 A.

It can handle a maximum drain-source voltage of 60 V.

The dimensions of the TO-263 package are approximately 10.75 mm in length, 10.4 mm in width, and 4.6 mm in height.

The typical gate charge at Vgs is 27 nC.

The maximum power dissipation rating is 95 W.

It operates within a temperature range from -55°C to 175°C.

The maximum gate-source voltage rating is ±16 V.

The forward voltage is 1.6 V.

The maximum drain-source resistance is 20 mΩ.

This MOSFET features an N-channel type.

This model has a pin count of 3.

The mount type for this device is surface mount.

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