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STMicroelectronics FDmesh N-Channel Power MOSFET TO-247 Package 20 A, 600 V, Enhancement Mode STW20NM60FD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW20NM60FD |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | FDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 290mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed with FDmesh technology for enhanced performance and reliability.
- Through-hole mount type for easy PCB assembly.
- Low maximum drain-source resistance of 290 milliohms.
- Maximum power dissipation rated at 214 watts for high efficiency.
- Operates safely from -65°C to 150°C temperature range.
- 3-pin configuration in TO-247 package for high current capability.
- Gate charge of 37 nanocoulombs ensures fast switching speeds.
- Maximum gate-source voltage of ±30 volts for robust gate control.
Product Description
STMicroelectronics STW20NM60FD is a high-performance FDmesh N-Channel Power MOSFET featuring a TO-247 through-hole package. Designed with enhancement mode operation, it provides a continuous drain current of 20 amperes and a maximum drain-source voltage of 600 volts, making it suitable for demanding power switching and amplification applications in industrial and electronics systems.
This MOSFET utilizes STMicroelectronics' FDmesh technology to enhance electrical performance, reduce conduction losses, and improve thermal management, ensuring reliable operation in harsh environments with operating temperatures ranging from -65°C to +150°C.
The device features a low maximum drain-source resistance (Rds(on)) of 290 milliohms, helping minimize power dissipation and heat generation during operation. It also has a maximum power dissipation rating of 214 watts, supporting high power applications such as power supplies, motor control, inverters, and automotive electronics.
Its 3-pin TO-247 package enables through-hole mounting for robust mechanical stability and ease of assembly on printed circuit boards. The gate charge of 37 nanocoulombs allows for fast switching speeds, and the maximum gate-source voltage rating of ±30 volts provides strong gate drive capabilities while protecting against voltage spikes.
With a forward voltage drop of 1.5 volts, the STW20NM60FD reduces conduction losses during load cycles. This MOSFET is widely used in industrial, manufacturing, HVAC, power management, and automotive sectors, offering a reliable discrete semiconductor solution for power switching and amplification.
Designed for high-power industrial and electronics applications. Suitable for use in power supplies, motor drivers, and inverters. Robust thermal and electrical performance with high operating temperature tolerance. Through-hole TO-247 package supports sturdy mounting and heat dissipation.
Ideal for applications requiring fast switching and high current capability. Explore more discrete semiconductor solutions and Power MOSFET devices on EnvMart for industrial and technical purchases.
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Frequently Asked Questions
The STW20NM60FD has a maximum continuous drain current of 20 amperes.
This model has a maximum drain-source voltage rating of 600 volts.
It operates safely within a temperature range of -65°C to 150°C.
The maximum power dissipation rated for the STW20NM60FD is 214 watts.
The typical gate charge for this model is 37 nanocoulombs.
It comes in a TO-247 package and uses a through-hole mounting style.
The maximum drain-source resistance (Rds(on)) is 290 milliohms.
This model features a 3-pin configuration.
The forward voltage drop for this MOSFET is 1.5 volts.
It utilizes an N-channel configuration with enhancement mode operation.
The maximum gate-source voltage rating is ±30 volts.
The STW20NM60FD is manufactured in India.
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