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STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 800 V Enhancement Mode, 3-Pin TO-220 STP18NM80
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP18NM80 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 295mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET features an Enhancement mode channel for improved control.
- It comes in a 3-pin TO-220 package for effective heat dissipation.
- Maximum power dissipation of 190 W supports high-power applications.
- Operating temperature ranges from -65°C to 150°C to ensure durability in harsh environments.
- The device has a low drain-source resistance of 295 milliohms for efficient conduction.
- Typical gate charge is 70 nC at Vgs, enabling fast switching.
- Package dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
- Suits applications in power electronics, industrial machinery, and automotive systems.
Product Description
STMicroelectronics STP18NM80 is a high-performance MDmesh N-Channel MOSFET designed for robust electronic switching applications. It delivers a maximum continuous drain current of 17 A and can withstand a maximum drain-source voltage of 800 V. The Enhancement mode channel design ensures reliable and efficient control in power circuits.
Encased in a 3-pin TO-220 through-hole package, this MOSFET offers excellent thermal management with a maximum power dissipation rating of 190 W. It operates effectively over a wide temperature range from -65°C to 150°C, making it highly suitable for demanding industrial, automotive, and power management uses.
The device features a maximum drain-source resistance of 295 milliohms, which helps to minimize conduction losses and enhance overall efficiency. The typical gate charge is 70 nC at rated gate voltage, facilitating high-speed switching and improved energy efficiency in circuits.
Its compact dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width allow for easy integration into circuit boards, especially where space optimization is key. Applications for the STP18NM80 include industrial machinery controls, power electronics, automotive electronic systems, and other high-power semiconductor implementations.
This MOSFET features an Enhancement mode channel for improved control. It comes in a 3-pin TO-220 package for effective heat dissipation. Maximum power dissipation of 190 W supports high-power applications. Operating temperature ranges from -65°C to 150°C to ensure durability in harsh environments.
The device has a low drain-source resistance of 295 milliohms for efficient conduction. Typical gate charge is 70 nC at Vgs, enabling fast switching. Package dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
Suits applications in power electronics, industrial machinery, and automotive systems. Explore more MOSFETs and semiconductor components on EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 17 A.
It can withstand a maximum drain-source voltage of 800 V.
The maximum power dissipation rating is 190 W, suitable for high-power applications.
The package dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
It operates effectively over a temperature range from -65°C to 150°C.
The typical gate charge is 70 nC at the rated gate voltage.
The maximum drain-source resistance is 295 milliohms, which helps minimize conduction losses.
It features an Enhancement mode channel for improved control in power circuits.
This model has a pin count of 3, suitable for through-hole mounting.
The maximum gate-source voltage is -30 V to +30 V.
It is suitable for applications in power electronics, industrial machinery, and automotive systems.
The country of origin for this model is India.
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