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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 900 V, 3 A, Enhancement Mode, TO-220 STP3NK90ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STP3NK90ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 4.8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 22.7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Enhancement mode N-Channel MOSFET specifically designed for reliable switching applications.
- Maximum drain-source voltage of 900 V ensures high voltage tolerance.
- Continuous drain current rated at 3 A supports moderate power loads.
- TO-220 through-hole package with 3 pins for easy PCB mounting.
- Maximum power dissipation of 25 W enables efficient thermal management.
- Operation temperature range from -55°C to 150°C for robust performance in varied environments.
- Low maximum drain-source resistance of 4.8 Ω improves conduction efficiency.
- Typical gate charge of 22.7 nC at Vgs ensures fast switching speeds.
Product Description
STMicroelectronics STP3NK90ZFP is a MDmesh SuperMESH N-Channel MOSFET offering a maximum continuous drain current of 3 A and a drain-source voltage rating of 900 V in an enhancement mode configuration. Packaged in a TO-220 through-hole package with 3 pins, this device is suited for power switching applications requiring high voltage tolerance and efficient conduction.
The MOSFET features a maximum power dissipation of 25 W and a wide operating temperature range from -55°C to 150°C, making it ideal for demanding industrial, electronic, and power management applications. Its low maximum drain-source resistance of 4.8 Ω reduces power losses and heat generation during operation.
The typical gate charge of 22.7 nC at specified gate-source voltage and maximum gate-source voltage of ±30 V support fast switching and reliable control. Its compact dimensions (16.4 mm height, 10.4 mm length, and 4.6 mm width) facilitate integration into standard circuit designs.
STMicroelectronics' MDmesh SuperMESH series MOSFETs are widely used in industrial electronics, power supplies, motor drives, and other manufacturing equipment where superior switching performance and robustness are critical.
Enhancement mode N-Channel MOSFET for switching applications. High voltage tolerance up to 900 V for demanding electronic circuits. Continuous drain current of 3 A supporting moderate power loads. TO-220 3-pin through-hole package for easy mounting and heat dissipation.
Thermally robust with 25 W power dissipation and high temperature operation. Low drain-source resistance of 4.8 Ω ensures efficient conduction. Standard gate charge and voltage ratings provide fast, reliable switching. Compact size suited for diverse industrial and electronic applications.
This product is categorized under discrete semiconductors and is suitable for engineers and technicians designing power management and electronic control systems. Explore more from STMicroelectronics and related MOSFET components at EnvMart for your industrial and commercial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 3 A, which supports moderate power loads.
This MOSFET has a maximum drain-source voltage rating of 900 V, ensuring high voltage tolerance for demanding applications.
It is packaged in a TO-220 through-hole package with 3 pins, facilitating easy PCB mounting.
The operating temperature range is from -55°C to 150°C, making it suitable for various environmental conditions.
The maximum power dissipation is rated at 25 W, allowing for efficient thermal management during operation.
The typical gate charge is 22.7 nC at the specified gate-source voltage, which supports fast switching speeds.
The maximum drain-source resistance is 4.8 Ω, which improves conduction efficiency.
The maximum gate-source voltage rating is ±30 V, which is suitable for reliable control in switching applications.
The dimensions of this model are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model uses an N-channel configuration, which is typical for enhancement mode MOSFETs.
This MOSFET is suitable for power switching applications, including industrial electronics, power supplies, and motor drives.
It belongs to the MDmesh and SuperMESH series, designed for superior switching performance.
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