Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

STMicroelectronics N-Channel MDmesh SuperMESH MOSFET 900 V 2.1 A TO-220 STP2NK90Z

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP2NK90Z
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 2.1A
Maximum Drain Source Voltage Vds 900V
Maximum Drain Source Resistance Rds 6.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 70W
Typical Gate Charge Qg @ Vgs 19.5nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • Enhancement mode channel operation provides reliable switching performance.
  • Through hole mount type with 3-pin configuration suitable for various applications.
  • Maximum power dissipation of 70 W enables high efficiency in power handling.
  • Wide operating temperature range from -55°C to 150°C supports industrial environments.
  • Low forward voltage of 1.6 V ensures reduced power loss.
  • Typical gate charge of 19.5 nC supports fast switching capabilities.
  • Robust maximum drain-source resistance of 6.5 Ω enhances durability.
  • Compact dimensions (15.75 mm height, 10.4 mm length, 4.6 mm width) facilitate space-saving designs.

Product Description

STMicroelectronics STP2NK90Z is a high-performance N-Channel MOSFET featuring MDmesh SuperMESH technology suitable for industrial, electronic power management, and semiconductor applications. This device operates with a maximum continuous drain current of 2.1 A and a maximum drain source voltage rating of 900 V, making it ideal for switching and amplification functions in power circuits.

Designed with a TO-220 package and a 3-pin configuration for through-hole mounting, this MOSFET offers reliable operation over a wide temperature range of -55°C to 150°C, ensuring excellent performance in harsh industrial and laboratory environments. Its enhancement mode channel and gate charge characteristics support efficient and fast switching with minimal losses.

The device's typical gate charge of 19.5 nC and low forward voltage of 1.6 V minimize power dissipation while enabling rapid response times. Its maximum power dissipation rating of 70 W allows for robust handling of high power loads in electrical equipment. With a maximum drain-source resistance of 6.5 Ω, the MOSFET provides durable operation and stable performance under demanding conditions.

Compact physical dimensions (15.75 mm in height, 10.4 mm in length, and 4.6 mm width) enable straightforward integration into PCB layouts where space is a critical factor. The maximum gate source voltage rating of -30 V to +30 V protects the device against voltage surges, enhancing circuit reliability.

Enhancement mode N-Channel MOSFET suitable for switching and power amplification. Through hole mount, TO-220 package with 3 pins facilitates easy installation. High voltage rating of 900 V and continuous drain current of 2.1 A.

Wide operating temperature range from -55°C to 150°C supports industrial uses. Low forward voltage and gate charge optimize efficiency and switching speed. Maximum power dissipation up to 70 W for robust power handling. Compact size assists in designing space-efficient electronic assemblies.

Maximum gate source voltage rating ensures voltage spike protection.

This STMicroelectronics MOSFET is ideal for incorporation in power switching, industrial automation, electronic design, and HVAC control systems. It is part of the MDmesh SuperMESH series, well known for performance and reliability in semiconductor applications.

Explore EnvMart categories for discrete semiconductors and MOSFET devices suitable for your industrial and electronic component needs.

STMicroelectronics N-Channel MDmesh SuperMESH MOSFET 900 V 2.1 A TO-220 STP2NK90Z
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 2.1 A.

The maximum drain-source voltage rating is 900 V.

It has a maximum power dissipation rating of 70 W.

This model operates within a temperature range of -55°C to 150°C.

The STP2NK90Z features a 3-pin configuration suitable for through-hole mounting.

Its dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

The typical gate charge is 19.5 nC.

The maximum gate-source voltage rating is -30 V to +30 V.

It uses an enhancement mode N-channel configuration.

The forward voltage is 1.6 V.

The maximum drain-source resistance is 6.5 Ω.

This MOSFET is suitable for power switching, industrial automation, electronic design, and HVAC control systems.

Related Products

Other Products from this brand

$1.04
$1.00 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$1.04
$1.00
Tax included