$1.04
$1.00
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP2NK90Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.1A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 6.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 19.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STP2NK90Z is a high-performance N-Channel MOSFET featuring MDmesh SuperMESH technology suitable for industrial, electronic power management, and semiconductor applications. This device operates with a maximum continuous drain current of 2.1 A and a maximum drain source voltage rating of 900 V, making it ideal for switching and amplification functions in power circuits.
Designed with a TO-220 package and a 3-pin configuration for through-hole mounting, this MOSFET offers reliable operation over a wide temperature range of -55°C to 150°C, ensuring excellent performance in harsh industrial and laboratory environments. Its enhancement mode channel and gate charge characteristics support efficient and fast switching with minimal losses.
The device's typical gate charge of 19.5 nC and low forward voltage of 1.6 V minimize power dissipation while enabling rapid response times. Its maximum power dissipation rating of 70 W allows for robust handling of high power loads in electrical equipment. With a maximum drain-source resistance of 6.5 Ω, the MOSFET provides durable operation and stable performance under demanding conditions.
Compact physical dimensions (15.75 mm in height, 10.4 mm in length, and 4.6 mm width) enable straightforward integration into PCB layouts where space is a critical factor. The maximum gate source voltage rating of -30 V to +30 V protects the device against voltage surges, enhancing circuit reliability.
Enhancement mode N-Channel MOSFET suitable for switching and power amplification. Through hole mount, TO-220 package with 3 pins facilitates easy installation. High voltage rating of 900 V and continuous drain current of 2.1 A.
Wide operating temperature range from -55°C to 150°C supports industrial uses. Low forward voltage and gate charge optimize efficiency and switching speed. Maximum power dissipation up to 70 W for robust power handling. Compact size assists in designing space-efficient electronic assemblies.
Maximum gate source voltage rating ensures voltage spike protection.
This STMicroelectronics MOSFET is ideal for incorporation in power switching, industrial automation, electronic design, and HVAC control systems. It is part of the MDmesh SuperMESH series, well known for performance and reliability in semiconductor applications.
Explore EnvMart categories for discrete semiconductors and MOSFET devices suitable for your industrial and electronic component needs.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent