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STMicroelectronics MDmesh N-Channel MOSFET 29 A 600 V Enhancement 3-Pin TO-220 STP34NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP34NM60N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 105mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 210W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MDmesh series device operates in enhancement mode with a channel resistance of 105 milliohms.
- It supports a maximum power dissipation of 210 W and a wide operating temperature range from -55°C to 150°C.
- The MOSFET has a typical gate charge of 84 nC at specified gate voltage conditions.
- The maximum gate-source voltage range is ±25 V, ensuring robust switching operation.
- Compact dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width facilitate easy mounting through hole on PCBs.
- The device is suitable for industrial and electronic power management applications requiring efficient high-voltage switching.
Product Description
STMicroelectronics STP34NM60N is an N-Channel MDmesh MOSFET designed for high-voltage and high-current power switching applications. It supports a maximum continuous drain current of 29 A and withstands a maximum drain-source voltage of 600 V.
Featuring an enhancement mode channel with a low drain-source resistance of 105 milliohms, the device offers efficient power dissipation rated at 210 W. It is packaged in a 3-pin TO-220 format for through-hole mounting, making it suitable for various industrial electronics and power control circuits.
The MOSFET operates effectively within a wide temperature range from -55°C to 150°C, offering reliability in harsh industrial environments. Its typical gate charge of 84 nC and maximum gate-source voltage of ±25 V ensures precise switching behavior and control.
With compact physical dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width, the STP34NM60N is designed for space-efficient, robust applications. This power MOSFET is ideal for industrial, manufacturing, HVAC, and electronic power management systems requiring high efficiency and durability.
It supports through-hole mounting and is optimized for power switching and load control operations. No explicit automotive or industry approvals are listed, making it suitable primarily for general industrial use.
This product is new and originates from India by default. Enhance your electronic design projects with the reliable STMicroelectronics STP34NM60N MOSFET, available through EnvMart's extensive semiconductor catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 A.
It can withstand a maximum drain-source voltage of 600 V.
The maximum power dissipation is rated at 210 W.
The device features a low drain-source resistance of 105 milliohms.
This model has dimensions of 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
The typical gate charge is 84 nC at specified gate voltage conditions.
It operates effectively within a temperature range of -55°C to 150°C.
The STP34NM60N is designed for through-hole mounting.
The maximum gate-source voltage range is ±25 V.
This device is packaged in a 3-pin TO-220 format.
It is suitable for industrial electronics and power management applications requiring efficient high-voltage switching.
This model belongs to the MDmesh series of MOSFETs.
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