STMicroelectronics MDmesh N-Channel MOSFET, 13 A, 600 V Enhancement Mode, 3-Pin TO-220 Package STP18NM60N

STMicroelectronics STP18NM60N is a high-performance MDmesh N-Channel MOSFET, rated for 13 amp continuous drain current and 600 volts maximum drain-source voltage. It operates in enhancement mode featuring a compact 3-pin TO-220 package suitable for through-hole mounting in various circuit designs.

With a maximum power dissipation of 110 watts, this transistor can handle significant thermal loads typical in power electronics applications. It is engineered to operate reliably across a broad temperature range from -55°C to 150°C, accommodating demanding environments.

The device exhibits a low maximum drain-source on resistance of 285 milliohms, enabling efficient current conduction with minimal power loss. Its typical gate charge of 35 nanoCoulombs ensures fast switching capabilities, while the gate-source voltage tolerance of ±25 volts provides robustness against voltage spikes.

Physically, the MOSFET measures 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width, making it suitable for compact PCB layouts. The forward voltage of 1.6 volts supports optimal switching performance for industrial and power management applications.

This STMicroelectronics MOSFET is widely used in power switching, motor control, power supplies, and other industrial, manufacturing, and electronic equipment sectors. Its durable construction and reliable performance make it a preferred choice for engineers designing robust power electronic circuits.

This MOSFET is designed for through-hole mounting applications. Maximum power dissipation capability is 110 watts. It supports an operating temperature range from -55°C to 150°C. Maximum drain-source resistance is 285 milliohms.

Typical gate charge at Vgs is 35 nanoCoulombs. Maximum gate-source voltage ranges from -25 to +25 volts. Compact 3-pin TO-220 package dimensions enhance PCB integration. Forward voltage is 1.6 volts under typical conditions.

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