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STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V Enhancement Mode, 3-Pin TO-247 STW48NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW48NM60N |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 124nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Maximum continuous drain current of 39 amperes ensures robust conduction capacity.
- Supports maximum drain-source voltage of 600 volts for high voltage applications.
- TO-247 package type facilitates through-hole mounting for easy PCB integration.
- Enhancement mode channel with 3 pins providing reliable electrical performance.
- Maximum power dissipation rating of 255 watts allows handling significant power loads.
- Gate voltage tolerance up to ±25 volts ensures stable operation under varying conditions.
- Typical gate charge of 124 nanocoulombs optimizes switching speed.
- Operating temperature range from -55°C to 150°C supports harsh environments.
Product Description
STMicroelectronics STW48NM60N is a MDmesh N-Channel Enhancement Mode MOSFET designed for high efficiency and durability in power electronics applications. It is housed in a TO-247 package with 3 pins and supports a maximum continuous drain current of 39 amps and a drain-source voltage of 600 volts, making it suitable for power switching and control in industrial, automotive, and power supply applications.
The device features a maximum power dissipation of 255 watts and a gate voltage tolerance ranging from -25 to +25 volts, allowing stable operation and high switching speed. With a typical gate charge of 124nC and a low Rds(on) of 70 milliohms, this MOSFET ensures efficient conduction and quick response times.
Operating comfortably over a temperature range from -55°C to 150°C and employing MDmesh technology, the STW48NM60N excels in reliability and performance for demanding environments. The TO-247 package allows easy mounting on through-hole PCB designs, facilitating installation and heat dissipation.
Its compact dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height provide a balance between power capability and space-saving. Although it does not carry specific standards or automotive certifications, it is widely used in various commercial and industrial power management solutions.
Maximum continuous drain current of 39 amperes for high current applications. 600 volts drain-source voltage rating. Efficient enhancement mode N-channel operation to control power switching. Robust maximum power dissipation of 255 watts for handling considerable load.
Wide operating temperature range from -55°C to 150°C for versatility. Low typical gate charge promoting fast switching. TO-247 through-hole packaging supports heat management and easy PCB mount. Features MDmesh technology enhancing performance and reliability.
Device dimensions facilitate compact power electronic designs. Ideal for industrial, automotive, and manufacturing power electronics sectors. Explore more high-quality MOSFET devices and discrete semiconductors in the Electronics & Electricals category on EnvMart for optimized industrial and commercial solutions.
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Frequently Asked Questions
The maximum continuous drain current for the STW48NM60N is 39 amperes, making it suitable for high current applications.
This model supports a maximum drain-source voltage of 600 volts, suitable for high voltage applications.
The maximum power dissipation rating is 255 watts, allowing it to handle significant power loads efficiently.
The STW48NM60N is housed in a TO-247 package type and is designed for through-hole mounting, facilitating easy PCB integration.
It operates over a temperature range from -55°C to 150°C, making it versatile for harsh environments.
The typical gate charge is 124 nanocoulombs, which helps optimize switching speed.
The STW48NM60N has 3 pins, which is standard for its configuration.
The maximum drain-source resistance (Rds(on)) is 70 milliohms, ensuring efficient conduction.
The gate voltage tolerance ranges from -25 to +25 volts, allowing stable operation under varying conditions.
This MOSFET is suitable for power switching and control in industrial, automotive, and power supply applications.
It employs MDmesh technology, which enhances performance and reliability in power electronics applications.
The dimensions of the STW48NM60N are 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
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