STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V Enhancement Mode, 3-Pin TO-220 STP24NM60N

The STMicroelectronics STP24NM60N is a MDmesh N-Channel Enhancement Mode MOSFET designed for efficient power switching and high voltage applications. It has a maximum continuous drain current rating of 17 A and a maximum drain-source voltage of 650 V, suitable for power management and industrial electronics.

This device comes in a three-pin TO-220 through-hole package, providing robust mechanical mounting and thermal dissipation. Its low maximum drain-source resistance of 190 mΩ ensures minimal conduction losses to improve overall system efficiency.

The MOSFET operates reliably over a broad temperature range from -55°C minimum up to 150°C maximum, making it ideal for demanding environmental conditions. Its typical gate charge of 46 nC at gate-source voltage supports fast switching applications.

With a maximum power dissipation capability of 125 W and a forward voltage of 1.6 V, this component can be used in power supplies, motor control, and industrial automation. The compact TO-220 package measures 15.75 mm in height, 10.4 mm in length, and width of 4.6 mm, allowing it to fit efficiently on crowded PCBs.

High current N-channel MOSFET with 17 A continuous drain capacity. 650 V maximum drain-source voltage for robust power switching. Low Rds(on) of 190 mΩ reducing conduction losses. Standard 3-pin TO-220 through-hole package for easy assembly.

Wide operating temperature range from -55°C to 150°C. Suitable for industrial, automation, and power electronics applications.

This product is ideal for engineers and designers seeking a reliable power transistor with efficient switching and rugged performance. It is widely used in power management, switching regulators, and electronic control systems.

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