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DiodesZetex General Purpose PNP Transistor Maximum -2 A Collector Current, -20 V Voltage, 600 mW Power DSS20200L-7

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DSS20200L-7
Width 2.5mm
Mount Type Surface
Series DSS20200L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -20V
Minimum DC Current Gain hFE 150
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO -20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 600mW
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for surface mounting in a compact 3-pin SOT-23 package.
  • Features a single transistor configuration with PNP polarity.
  • Minimum DC current gain (hFE) of 150, ensuring reliable amplification.
  • Operating temperature range from -55°C to 150°C suitable for varied environments.
  • Maximum transition frequency of 100 MHz ideal for switching and amplification applications.
  • Compliance with automotive standard AEC-Q101 for automotive system use.
  • Maximum collector base voltage and emitter base voltage rated at -20 V and -7 V respectively.
  • Manufactured in China with stringent quality control.

Product Description

DiodesZetex DSS20200L-7 is a general purpose PNP bipolar transistor designed for discrete semiconductor applications requiring a maximum DC collector current of -2 A and a maximum collector emitter voltage of -20 V. This transistor features a single transistor configuration in a compact surface mount SOT-23 package with three pins, making it ideal for efficient PCB layouts in industrial, automotive, and electronic circuit designs.

With a maximum power dissipation rating of 600 mW and a minimum DC current gain (hFE) of 150, the DSS20200L-7 delivers reliable amplification for switching and signal processing tasks. It supports a wide operating temperature range from -55°C to 150°C, ensuring durability and stability in harsh environments.

The transistor's maximum transition frequency of 100 MHz makes it suitable for high-frequency and fast switching applications. Additionally, it conforms to the AEC-Q101 automotive standard, qualifying it for use in automotive electronic systems that demand robust and high-quality components.

Physically, the device has compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height, facilitating integration into space-constrained electronic designs. The transistor also maintains maximum collector base voltage (VCBO) of -20 V and maximum emitter base voltage (VEBO) of -7 V, critical parameters for ensuring safe and effective electronic performance.

This product is manufactured in China and is presented as new, in accordance with standard industrial quality assurance practices. Designed for surface mount applications in electronic circuits. Offers reliable PNP transistor operation with high current and voltage ratings.

Meets automotive quality standards for use in demanding environments. Compact SOT-23 package supports efficient PCB design and assembly. Suitable for industrial, consumer electronics, automotive, and manufacturing applications.

Explore the DiodesZetex range of Bipolar Transistors on EnvMart for more options and technical specifications to suit various industrial and electronic applications.

DiodesZetex General Purpose PNP Transistor Maximum -2 A Collector Current, -20 V Voltage, 600 mW Power DSS20200L-7
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Frequently Asked Questions

The maximum collector current for the DSS20200L-7 is -2 A.

It operates within a temperature range of -55°C to 150°C.

The maximum power dissipation for this transistor is 600 mW.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency applications.

The dimensions of the DSS20200L-7 are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It is packaged in a compact SOT-23 surface mount package.

The minimum DC current gain (hFE) is 150, ensuring reliable amplification.

It complies with the AEC-Q101 automotive standard, qualifying it for use in automotive electronic systems.

The maximum collector-emitter voltage (Vceo) is rated at -20 V.

This model features a single transistor configuration.

The maximum emitter-base voltage (VEBO) is rated at -7 V.

It is manufactured in China under stringent quality control standards.

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