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DiodesZetex General Purpose PNP Transistor 1 A, 80 V, 4-Pin SOT-223 Surface Mount BCP5316TA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | BCP5316TA |
| Width | 7.1mm |
| Mount Type | Surface |
| Series | BCP53 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -80V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -100V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | -1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
Key Features
- Designed for general purpose PNP transistor applications.
- Supports maximum DC collector current of 1 ampere.
- Maximum collector emitter voltage of 80 volts for reliable switching.
- Compact 4-pin SOT-223 surface-mount package for easy PCB integration.
- Operates within temperature range from -65°C to 150°C.
- Maximum power dissipation rating of 2 watts.
- Minimum DC current gain (hFE) of 25 for consistent amplification.
- Device meets automotive standard AEC-Q101 for enhanced reliability.
Product Description
DiodesZetex BCP5316TA is a general purpose PNP bipolar transistor designed for surface mount applications in electronic circuits requiring switching and amplification.
This transistor supports a maximum DC collector current of 1 ampere and withstands voltages up to 80 volts between the collector and emitter. Its 4-pin SOT-223 package ensures compact design and easy mounting on printed circuit boards.
The device is engineered for operation in harsh environments with an operating temperature range from -65°C to 150°C. It features a maximum power dissipation of 2 watts ensuring reliable performance under load conditions.
The minimum DC current gain of 25 ensures effective amplification in a range of circuits. The transistor also complies with automotive standard AEC-Q101, making it suitable for use in demanding automotive and industrial applications.
Additional technical advantages include a maximum transition frequency of 150 MHz, supporting high frequency switching and signal processing tasks. Physical dimensions of the component measure approximately 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height, facilitating space-efficient electronics design.
Designed for general purpose PNP transistor applications. Supports maximum DC collector current of 1 ampere. Maximum collector emitter voltage of 80 volts for reliable switching. Compact 4-pin SOT-223 surface-mount package for easy PCB integration.
Operates within temperature range from -65°C to 150°C. Maximum power dissipation rating of 2 watts. Minimum DC current gain (hFE) of 25 for consistent amplification. Device meets automotive standard AEC-Q101 for enhanced reliability.
Transition frequency up to 150 MHz supports high-frequency applications. Package dimensions approximately 6.55 mm length, 7.1 mm width, and 1.65 mm height.
This transistor is ideal for industrial, automotive, electronics manufacturing, and laboratory applications requiring robust and reliable PNP switching and amplification devices. Explore similar semiconductor components and more at EnvMart.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for this transistor is 1 ampere.
This model supports a maximum collector-emitter voltage of 80 volts.
It operates within a temperature range from -65°C to 150°C.
The transistor comes in a compact 4-pin SOT-223 surface-mount package.
The maximum power dissipation rating for this unit is 2 watts.
It has a minimum DC current gain (hFE) of 25.
The maximum transition frequency is 150 MHz, allowing for high-frequency applications.
Yes, it meets the automotive standard AEC-Q101 for enhanced reliability.
The dimensions are approximately 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.
The maximum emitter-base voltage (VEBO) is -5 volts.
The maximum collector-base voltage (VCBO) is -100 volts.
This transistor is suitable for industrial, automotive, electronics manufacturing, and laboratory applications requiring reliable PNP switching and amplification.
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