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DiodesZetex 1 A PNP Bipolar Transistor 80 V 3-Pin SOT-223 BCP53TA

Category Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model BCP53TA
Width 7.1mm
Mount Type Surface
Series BCP53
Maximum Operating Temperature 150°C
Package Type SOT-223 (SC-73)
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 25
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -100V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz
STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand STMicroelectronics

Key Features

  • Maximum DC collector current of 1 ampere.
  • Collector-emitter voltage rating of 80 volts.
  • Surface mount package type SOT-223 (SC-73) with 3 pins.
  • PNP transistor configuration with single-transistor design.
  • Maximum power dissipation of 2 watts ensuring efficient thermal management.
  • Maximum transition frequency up to 150 MHz suitable for high-frequency applications.
  • Wide operating temperature range from -65°C to 150°C.
  • Designed with automotive standard AEC-Q101 for reliability in automotive applications.

Product Description

DiodesZetex BCP53TA is a general purpose PNP bipolar transistor designed for industrial, automotive, and electronic circuit applications requiring moderate collector current and voltage handling capabilities. It features a surface mount package type SOT-223 (SC-73) with three pins, enabling easy PCB mounting and compact design integration.

This transistor supports a maximum DC collector current of 1 ampere with a collector-emitter voltage rating of 80 volts. It exhibits a minimum DC current gain (hFE) of 25 and a maximum power dissipation of 2 watts for stable operation under various conditions. The maximum transition frequency of 150 MHz makes it suitable for medium-frequency amplifier and switching circuits.

Operable in a broad temperature range from -65°C to 150°C, the BCP53TA meets the automotive standard AEC-Q101, ensuring high reliability for automotive electronics. Its physical dimensions are 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height, fitting compact designs.

This transistor finds use in power amplification, switching, signal processing, and automotive electronic circuits. The SOT-223 package helps reduce PCB footprint while providing adequate heat dissipation for its power rating.

Maximum DC collector current of 1 ampere. Collector-emitter voltage of 80 volts for medium power applications. Surface mount 3-pin SOT-223 package for compact installation. Robust PNP transistor configuration with single transistor design.

Efficient power dissipation of 2 watts to maintain thermal stability. High-frequency operation up to 150 MHz transition frequency. Wide temperature range of -65°C to +150°C supports harsh operating environments. Automotive standard AEC-Q101 certification for use in automotive systems.

Compact physical size fitting modern circuit boards. Manufactured in China with new product condition for assurance of quality. Explore a wide range of bipolar Transistors and discrete semiconductors in the Electronics & Electricals category at EnvMart for all your electronic component needs.

DiodesZetex 1 A PNP Bipolar Transistor 80 V 3-Pin SOT-223 BCP53TA
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Frequently Asked Questions

The maximum DC collector current for this model is 1 ampere.

The collector-emitter voltage rating is 80 volts.

It features a surface mount package type SOT-223 (SC-73) with three pins.

The maximum power dissipation is 2 watts, ensuring efficient thermal management.

The maximum transition frequency is up to 150 MHz, suitable for high-frequency applications.

It operates within a temperature range from -65°C to 150°C.

The minimum DC current gain (hFE) is 25.

It is designed to meet the automotive standard AEC-Q101, ensuring reliability in automotive applications.

The dimensions are 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.

It has a PNP transistor configuration with a single-transistor design.

The maximum emitter-base voltage (VEBO) is -5 volts.

This transistor is suitable for power amplification, switching, signal processing, and automotive electronic circuits.

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