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Vishay 100 V 60 A Schottky Diode, 3-Pin Through Hole TO-220F Package VF60100C-M3/4W
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 10.26mm |
| Brand | Vishay |
| Height | 15.24mm |
| Length | 10.26mm |
| Model | VF60100C-M3/4W |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | VFX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 60A |
| Peak Reverse Repetitive Voltage Vrrm | 100V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 20mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 320A |
| Maximum Forward Voltage Vf | 790mV |
Key Features
- The diode features a Trench MOS Barrier Schottky technology for enhanced efficiency.
- It supports a peak non-repetitive forward surge current of 320 A.
- Operating temperature ranges from -40°C to 150°C for robust performance.
- The device has a maximum forward voltage of 790 mV.
- Common cathode diode configuration with 3 pins facilitates easy through-hole mounting.
- Peak reverse current is low at 20 mA enhancing reliability in power applications.
- Designed for power conversion applications including switched-mode power supplies and DC/DC converters.
Product Description
Vishay VF60100C-M3/4W Schottky Diode is a high-performance 3-pin rectifier in a durable TO-220F through-hole package, designed for industrial and electronic power applications requiring efficient low forward voltage drop and fast switching speeds. This diode supports a maximum continuous forward current of 60 A and a peak repetitive reverse voltage of 100 V.
Featuring the patented Trench MOS Barrier Schottky (TMBS) technology, this diode minimizes stored charges, reducing switching losses and improving converter efficiency in AC/DC and DC/DC power supplies. It withstands peak surge currents up to 320 A and operates reliably in temperature extremes from -40°C to 150°C.
The device’s common cathode configuration and 3-pin layout in the TO-220F package provide ease of integration on through-hole PCBs in power management circuits. Its modest dimensions of 15.24 mm in height, 10.26 mm length and 4.83 mm width allow compact designs without sacrificing thermal handling.
This Schottky Diode is well-suited for industrial electronics, power supply units, renewable energy systems, and automotive power electronics requiring efficient rectification and low forward voltage losses.
The diode features a Trench MOS Barrier Schottky technology for enhanced efficiency. It supports a peak non-repetitive forward surge current of 320 A. Operating temperature ranges from -40°C to 150°C for robust performance.
The device has a maximum forward voltage of 790 mV. Common cathode diode configuration with 3 pins facilitates easy through-hole mounting. Compact TO-220F package dimensions: height 15.24 mm, length 10.26 mm, width 4.83 mm.
Peak reverse current is low at 20 mA enhancing reliability in power applications. Designed for power conversion applications including switched-mode power supplies and DC/DC converters. Explore the wide range of semiconductor diodes at EnvMart including Vishay’s high-quality Schottky rectifiers for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous forward current of this diode is 60 A.
The peak reverse repetitive voltage rating is 100 V.
The maximum forward voltage drop is 790 mV.
It supports a peak non-repetitive forward surge current of 320 A.
The operating temperature range is from -40°C to 150°C.
This diode supports through-hole mounting.
The dimensions of the TO-220F package are 15.24 mm in height, 10.26 mm in length, and 4.83 mm in width.
The diode has a common cathode configuration with 3 pins.
The peak reverse current is low at 20 mA.
This Schottky diode features Trench MOS Barrier Schottky technology for enhanced efficiency.
It is designed for power conversion applications including switched-mode power supplies and DC/DC converters.
The country of origin for this diode is China.
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