Nexperia Silicon Junction Switching Diode, Single, 215 mA, 100 V, 1.25 V Forward Voltage, SOD-123, 2-Pin BAS16H,115

Nexperia BAS16H,115 Silicon Junction Switching Diode is a high-performance small signal diode designed for surface mount applications, featuring a single diode configuration in a SOD-123 package with 2 pins. It supports continuous forward current of up to 215 mA and a peak reverse repetitive voltage of 100 V, making it suitable for switching and protection circuits in various electronic devices.

This diode maintains a low forward voltage of 1.25 V, minimizing power loss, and has an extremely fast peak reverse recovery time of 4 ns, which is essential for high-speed switching applications such as power supply rectifiers, signal processing, and electronic control systems.

The diode is rated for operation in a wide temperature range from -65°C to 150°C, enabling use in demanding industrial, automotive, and consumer electronics environments. It has a compact SOD-123 surface mount package with dimensions of 2.7 mm length, 1.7 mm width, and 1.2 mm height, allowing efficient PCB space utilization and automated assembly.

With a maximum power dissipation of 380 mW, this switching diode is effective for low power electronic circuits requiring reliable switching and protection. It supports customized high-density circuit designs with characteristics such as low leakage current and high voltage tolerance. This product is manufactured in China under strict quality controls by Nexperia.

Supports a maximum forward current of 215 mA suitable for low current applications. Ensures a peak reverse voltage of up to 100 V to handle high voltage switching. Very low forward voltage drop of 1.25 V reduces power loss in circuits.

Fast switching with a peak reverse recovery time of 4 ns for efficient high-speed signal applications. Operates within a temperature range from -65°C to 150°C ensuring reliability in harsh environments. Compact dimensions of 2.7 mm length, 1.7 mm width, and 1.2 mm height optimize PCB space usage.

Maximum power dissipation of 380 mW enables moderate power handling capability. Surface mount package (SOD-123) suitable for automated assembly processes. Designed for custom high density circuit design with low leakage and high voltage support.

Manufactured in China maintaining industry quality standards.

This diode is widely used in industrial electronics, consumer devices, communication equipment, and automotive electronics for efficient switching and signal integrity. Browse more from the Nexperia brand and discrete semiconductor category for complementary components and advanced switching solutions at EnvMart.

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