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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 9A 400V Enhancement Mode 3-Pin TO-220 STP11NK40ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STP11NK40ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 714-6787Brand: STMicroelectronicsManufacturers Part No.: STP11NK40ZFP |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This enhancement mode N-channel MOSFET is packaged in a 3-pin TO-220 for efficient heat dissipation.
- Maximum drain-source resistance is 550 milliohms optimizing performance.
- Maximum power dissipation rated at 30 Watts supports high power applications.
- Operational temperature ranges from -55°C to 150°C ensuring reliable industrial use.
- Typical gate charge is 32 nanocoulombs making it suitable for fast switching applications.
- Maximum gate-source voltage is ±30V enhancing robust control capabilities.
- Forward voltage is optimized to 1.6 Volts to reduce conduction losses.
- Physical dimensions include length 10.4 mm, width 4.6 mm, and height 16.4 mm.
Product Description
STMicroelectronics STP11NK40ZFP is an advanced MDmesh SuperMESH N-Channel MOSFET designed for power semiconductor applications requiring high efficiency and reliability. Featuring a maximum continuous drain current of 9 A and maximum drain-source voltage of 400 V, this device offers substantial power handling capabilities in a compact 3-pin TO-220 package.
Its enhancement mode channel design enables reliable switching control, supported by a maximum drain-source resistance (Rds) of 550 milliohms. With a typical gate charge (Qg) of 32 nC at Vgs, it ensures fast switching with minimized gate drive losses. The maximum gate-source voltage tolerance of ±30 V allows robust gate protection and enhanced gate control flexibility.
Mechanically, the MOSFET measures 10.4 mm in length, 4.6 mm in width, and 16.4 mm in height, housed in a through-hole TO-220 package suitable for easy PCB mounting and effective heat dissipation. The device operates reliably across a temperature range from -55°C to 150°C, making it suitable for industrial, laboratory, HVAC, manufacturing, and power control applications.
With a maximum power dissipation rating of 30 W and optimized forward voltage of 1.6 V, the STP11NK40ZFP ensures efficient power performance in demanding electronic circuits. It supports use in power supplies, motor controllers, and various switching applications requiring durable and stable MOSFET components.
This MOSFET supports high current loads up to 9 A. Enhanced switching performance with low Rds and typical gate charge of 32 nC. Wide operating temperature range from -55°C to 150°C for industrial robustness. Compact TO-220 package for easy integration and thermal management.
Maximum drain-source voltage of 400 V for high-voltage applications. Through-hole mount type ensures sturdy assembly on PCBs. Forward voltage of 1.6 V reduces conduction losses and improves efficiency.
The STP11NK40ZFP is an ideal semiconductor choice for engineers and designers seeking reliable and efficient N-Channel MOSFETs for power electronics. Its robust specifications align with needs across electronics manufacturing, design, and maintenance while being widely available for rapid prototyping and production.
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Frequently Asked Questions
The maximum continuous drain current for the STP11NK40ZFP is 9 A.
This model has a maximum drain-source voltage rating of 400 V.
The maximum power dissipation rated for this MOSFET is 30 Watts.
The typical gate charge for the STP11NK40ZFP is 32 nanocoulombs.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 16.4 mm in height.
The maximum gate-source voltage is ±30 V.
The maximum drain-source resistance (Rds) is 550 milliohms.
The operational temperature range is from -55°C to 150°C.
It is packaged in a 3-pin TO-220 package.
This MOSFET uses an enhancement mode N-channel design.
The forward voltage is optimized to 1.6 V, which helps reduce conduction losses and improve efficiency.
This model uses a through-hole mount type for easy PCB integration.
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