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DiodesZetex Small Signal Dual NPN + PNP Transistor 200 mA, 40 V, 6-Pin SOT-363 MMDT3946-7-F

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DiodesZetex Small Signal Dual NPN + PNP Transistor 200 mA, 40 V, 6-Pin SOT-363 MMDT3946-7-F

Name: DiodesZetex Small Signal Dual NPN + PNP Transistor 200 mA, 40 V, 6-Pin SOT-363 MMDT3946-7-F
Brand: DiodesZetex
SKU: 356410
Price: 0.07 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	2.2mm
Model	MMDT3946-7-F
Width	2.2mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-363
Minimum Operating Temperature	-55°C
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RS Stock No.	711-5017Brand: DiodesZetexManufacturers Part No.: MMDT3946-7-F
Pin Count	6
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	30
Transistor Polarity	NPN + PNP
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	60V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	200mA
Transistor Configuration	Isolated

Key Features

This transistor features isolated NPN and PNP transistor configurations for versatile usage.
It offers a minimum DC current gain (hFE) of 30 ensuring reliable amplification.
Maximum power dissipation is rated at 200 mW supporting moderate power levels.
The device operates within a temperature range of -55°C to 150°C for industrial-grade reliability.
Its compact dimensions are 2.2 mm length, 2.2 mm width, and 1.1 mm height, ensuring minimal PCB space usage.
The package type SOT-363 supports surface mount assembly for automated manufacturing.
Motor polarity includes both NPN and PNP types allowing complementary circuit designs.
Maximum collector base voltage is 60 V with a maximum emitter base voltage of 6 V.

Product Description

DiodesZetex MMDT3946-7-F is a high-quality small signal dual NPN + PNP transistor designed for electronic applications requiring compact size and reliable performance. The transistor supports up to 200 mA collector current and can withstand collector emitter voltages up to 40 V, packaged in a 6-pin SOT-363 surface mount package.

This transistor features isolated transistor configurations with minimum DC current gain (hFE) of 30. Rated for a maximum power dissipation of 200 mW, it is suitable for signal amplification and switching applications in various industrial, consumer electronics, and automotive systems complying with the AEC-Q101 automotive standard.

Operating temperature range from -55°C to 150°C enables use in demanding environments. Its compact dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height allow efficient printed circuit board layouts and automated surface-mount assembly.

Isolated small signal dual NPN + PNP transistor configuration. Maximum DC collector current 200 mA to handle moderate signal currents. Maximum collector emitter voltage 40 V for standard low-power electronics circuits. Minimum DC current gain (hFE) of 30 for effective amplification.

Maximum power dissipation 200 mW ensuring stable operation. Compact 6-pin SOT-363 surface mount package for space-saving design. Wide operating temperature range from -55°C to 150°C. Automotive standard AEC-Q101 compliant for automotive electronics applications.

This transistor is extensively used for signal processing, amplification, and switching in industrial controls, automotive electronics, consumer gadgets, and telecommunications circuits.

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Frequently Asked Questions

The maximum DC collector current for this model is 200 mA, allowing it to handle moderate signal currents effectively.

This transistor operates within a temperature range of -55°C to 150°C, suitable for demanding environments.

It is packaged in a 6-pin SOT-363 surface mount package, which supports automated assembly and saves PCB space.

The maximum collector-emitter voltage (Vceo) for this transistor is 40 V, making it suitable for standard low-power electronics circuits.

The minimum DC current gain (hFE) is 30, ensuring effective amplification in various applications.

This isolated dual NPN + PNP transistor configuration is used in signal processing, amplification, and switching applications across industrial controls, automotive electronics, and consumer gadgets.

The maximum power dissipation rating for this model is 200 mW, which supports stable operation during use.

The maximum emitter-base voltage (VEBO) is rated at 6 V, which is important for ensuring proper operation in circuits.

The height of this transistor is 1.1 mm, contributing to its compact design for efficient PCB layouts.

Yes, it complies with the AEC-Q101 automotive standard, making it suitable for automotive electronics applications.

The dimensions of this model are 2.2 mm in length and width, and 1.1 mm in height, allowing for minimal PCB space usage.

This model features both NPN and PNP transistor polarities, enabling complementary circuit designs.