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DiodesZetex Small Signal PNP Transistor MMDT3906-7-F, -200 mA, -40 V, 6-Pin SOT-363
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 2.2mm |
| Model | MMDT3906-7-F |
| Width | 2.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 711-5005Brand: DiodesZetexManufacturers Part No.: MMDT3906-7-F |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -40V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -40V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 200mW |
| Maximum DC Collector Current Idc | -200mA |
| Transistor Configuration | Isolated |
Key Features
- This transistor operates with a maximum collector emitter voltage of 40 V.
- It features a compact 6-pin SOT-363 surface mount package.
- The transistor configuration is isolated, providing electrical isolation between terminals.
- It has a minimum DC current gain of 30 and maximum power dissipation of 200 mW.
- Designed for reliable operation from -55°C to 150°C.
- Complies with automotive standard AEC-Q101 ensuring high quality and durability.
- The small form factor dimensions are 2.2 mm length, 2.2 mm width, and 1.1 mm height.
- Maximum collector base voltage and emitter base voltage are 40 V and 5 V respectively.
Product Description
DiodesZetex MMDT3906-7-F is a small signal PNP transistor ideal for various electronic circuits and semiconductor applications. It supports a maximum DC collector current of 200 mA and can handle voltages up to 40 V across collector emitter and collector base junctions, making it suitable for moderate power switching tasks.
This transistor comes in a compact 6-pin SOT-363 surface mount package, allowing for efficient PCB space utilization, which is essential for modern industrial, consumer electronics, automotive, and communication manufacturing processes. The isolated transistor configuration ensures stable operation and minimal interference between terminals.
It features a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 200 mW, balancing efficiency and thermal management. Certified to meet AEC-Q101 automotive standards, this transistor ensures robustness for automotive and harsh environment applications.
Manufactured for reliability, the transistor functions across a broad operating temperature range from -55°C to 150°C, supporting applications in various climatic and industrial conditions.
The package dimensions - 2.2 mm length, 2.2 mm width, and 1.1 mm height - facilitate compact designs while ensuring ease of automated surface mounting. Maximum DC Collector Current: 200 mA. Maximum Collector Emitter Voltage: 40 V.
Package Type: 6-Pin SOT-363 Surface Mount. Transistor Configuration: Isolated PNP. Minimum DC Current Gain: 30. Maximum Power Dissipation: 200 mW. Operating Temperature Range: -55°C to 150°C. Automotive Standard: AEC-Q101.
This transistor is widely used in industrial electronics, consumer appliances, automotive electronics, and communication devices. Its robust specifications make it suitable for signal amplification, switching, and other semiconductor functions in engineering and manufacturing environments.
Explore the DiodesZetex category for other high-quality electronic components and semiconductors at EnvMart to complement your design and production needs.
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Frequently Asked Questions
The maximum collector emitter voltage for this model is -40 V.
It comes in a 6-pin SOT-363 surface mount package.
The minimum DC current gain (hFE) for this transistor is 30.
The maximum power dissipation for the MMDT3906-7-F is 200 mW.
It operates within a temperature range of -55°C to 150°C.
This model complies with the AEC-Q101 automotive standard.
The dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.
The maximum DC collector current is -200 mA.
It features an isolated PNP transistor configuration.
The maximum emitter base voltage (VEBO) is -5 V.
This transistor is suitable for various applications including signal amplification and moderate power switching tasks in industrial and automotive electronics.
The maximum collector base voltage (VCBO) is -40 V.
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