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DiodesZetex High Voltage 200mA NPN Bipolar Transistor, 300V, 200mW Power, 3-Pin SOT-323 MMSTA42-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model MMSTA42-7-F
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
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RS Stock No. 711-4945Brand: DiodesZetexManufacturers Part No.: MMSTA42-7-F
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single

Key Features

  • Designed for surface mount applications in SOT-323 package.
  • Maximum collector current 200mA with collector-emitter voltage up to 300V.
  • Minimum DC current gain is 25 for effective amplification.
  • Wide temperature range from -55°C to 150°C for reliability.
  • Compact size enables integration into space-constrained PCB designs.
  • Single NPN transistor configuration suits various electronic circuits.
  • 3-pin package supports standard PCB footprint and ease of assembly.
  • Emitter-base voltage limit protects device under bias conditions.

Product Description

DiodesZetex MMSTA42-7-F is a high voltage bipolar NPN transistor designed for surface mount technology with a 3-pin SOT-323 package. It features a maximum DC collector current of 200mA and a collector-emitter voltage rating of 300V, making it suitable for medium power switching and amplification applications in electronic circuits.

The transistor supports a maximum power dissipation of 200mW, balancing power handling and thermal management for compact designs. Its minimum DC current gain of 25 ensures efficient current amplification. This device operates reliably across a temperature range from -55°C to 150°C, suitable for industrial, automotive, and commercial electronics exposed to varying environmental conditions.

Physical dimensions of 2.2mm in length and width with a 1.1mm height facilitate use in dense PCB assemblies where space optimization is critical. The single transistor configuration with NPN polarity allows broad versatility in circuit design, particularly in high voltage switching and signal processing tasks.

The MMSTA42-7-F transistor has a maximum collector-base voltage and emitter-base voltage of 300V and 6V respectively, allowing it to operate safely in circuits with high voltage differentials and typical bias environments. It is widely used in power and control electronics, automotive electronics, instrumentation, and other industrial applications.

Designed for surface mount applications in SOT-323 package. Maximum collector current 200mA with collector-emitter voltage up to 300V. Minimum DC current gain is 25 for effective amplification. Wide temperature range from -55°C to 150°C for reliability.

Compact size enables integration into space-constrained PCB designs. Single NPN transistor configuration suits various electronic circuits. 3-pin package supports standard PCB footprint and ease of assembly. Emitter-base voltage limit protects device under bias conditions.

Ideal for industrial, automotive, and commercial electronics.

Explore EnvMart's comprehensive range of discrete semiconductor devices and Bipolar Transistors for your next electronics project or production run. Find high-quality components from trusted brands like DiodesZetex for enhanced performance and reliability.

DiodesZetex High Voltage 200mA NPN Bipolar Transistor, 300V, 200mW Power, 3-Pin SOT-323 MMSTA42-7-F
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) of the MMSTA42-7-F transistor is 300V.

This NPN transistor can handle a maximum collector current of 200mA.

The minimum DC current gain (hFE) for the MMSTA42-7-F is 25.

The operating temperature range for this transistor is from -55°C to 150°C.

The MMSTA42-7-F uses a SOT-323 package type.

The physical dimensions of the MMSTA42-7-F are 2.2mm in length and width, with a height of 1.1mm.

The maximum power dissipation for the MMSTA42-7-F is 200mW.

The maximum emitter-base voltage (VEBO) for the MMSTA42-7-F is 6V.

The MMSTA42-7-F is suitable for medium power switching and amplification applications in electronic circuits, including industrial, automotive, and commercial electronics.

The MMSTA42-7-F transistor has 3 pins.

The transistor configuration of the MMSTA42-7-F is a single NPN configuration.

The MMSTA42-7-F is manufactured in India.

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