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DiodesZetex Small Signal PNP Bipolar Transistor 3-Pin SOT-23 100 mA 65 V BC856B-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC856B-7-F
Width 2.5mm
Mount Type Surface
Series BC856B
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
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RS Stock No. 711-4850PBrand: DiodesZetexManufacturers Part No.: BC856B-7-F
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • This transistor features a maximum power dissipation of 300 mW for reliable performance.
  • It offers a minimum DC current gain (hFE) of 220 for efficient signal amplification.
  • The device supports a high frequency operation with a transition frequency of up to 200 MHz.
  • Operating temperature ranges from -55°C to 150°C suitable for a wide variety of industrial applications.
  • It is supplied in a compact 3 mm length, 1.1 mm height, and 2.5 mm width SOT-23 package for easy PCB integration.
  • This transistor meets automotive standards AEC-Q100, AEC-Q101, and AEC-Q200 ensuring quality and reliability.
  • The maximum collector-base voltage is -80 V, allowing for robust operation under various conditions.
  • Ideal for discrete semiconductor applications in electronics, power, and signal processing circuits.

Product Description

DiodesZetex BC856B-7-F is a high-performance small signal PNP bipolar transistor designed for surface mount applications. It is housed in a 3-pin SOT-23 package, occupying minimal PCB space while delivering robust electrical characteristics suitable for electronic circuit amplification and switching.

With a maximum DC collector current of 100 mA and collector-emitter voltage rating of 65 V, this transistor ensures dependable operation in low power electronic circuits. It maintains efficiency through a minimum DC current gain of 220 and supports transition frequencies reaching 200 MHz, making it suitable for high frequency and RF applications.

The device operates reliably over an extensive temperature range from -55°C to 150°C and complies with automotive qualification standards including AEC-Q100, AEC-Q101, and AEC-Q200, reflecting its durability and quality for automotive and industrial environments.

The compact SOT-23 package measures 3 mm in length, 2.5 mm in width, and 1.1 mm in height, allowing designers to save PCB space without compromising functionality. Surface mount mounting type aids streamlined manufacturing and reduces handling costs.

This transistor is ideal for use in electronic components, power and signal switching circuits, and discrete semiconductor applications within industrial, automotive, and general electronics sectors.

This transistor features a maximum power dissipation of 300 mW for reliable performance. It offers a minimum DC current gain (hFE) of 220 for efficient signal amplification. The device supports a high frequency operation with a transition frequency of up to 200 MHz.

Operating temperature ranges from -55°C to 150°C suitable for a wide variety of industrial applications. It is supplied in a compact 3 mm length, 1.1 mm height, and 2.5 mm width SOT-23 package for easy PCB integration. This transistor meets automotive standards AEC-Q100, AEC-Q101, and AEC-Q200 ensuring quality and reliability.

The maximum collector-base voltage is -80 V, allowing for robust operation under various conditions. Ideal for discrete semiconductor applications in electronics, power, and signal processing circuits. Discover more quality semiconductor components like this DiodesZetex transistor at EnvMart to enhance your electronics assemblies and design efficiency.

Explore more products in our Bipolar Transistors category.

DiodesZetex Small Signal PNP Bipolar Transistor 3-Pin SOT-23 100 mA 65 V BC856B-7-F
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Frequently Asked Questions

The maximum power dissipation of the BC856B-7-F transistor is 300 mW.

This model offers a minimum DC current gain (hFE) of 220, which supports efficient signal amplification.

The transistor supports a transition frequency of up to 200 MHz, making it suitable for high frequency applications.

The SOT-23 package measures 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The operating temperature range for the BC856B-7-F is from -55°C to 150°C, suitable for various industrial applications.

The maximum collector-base voltage (VCBO) for this transistor is -80 V, allowing for robust operation under various conditions.

This model complies with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, ensuring quality and reliability.

The maximum DC collector current (Idc) for the BC856B-7-F is -100 mA.

It features a surface mount type, which aids in streamlined manufacturing and reduces handling costs.

The maximum emitter-base voltage (VEBO) for this transistor is -5 V.

This transistor is configured as a single PNP device, suitable for discrete semiconductor applications.

It is ideal for use in electronic components, power and signal switching circuits, and discrete semiconductor applications in industrial and automotive sectors.

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