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DiodesZetex Small Signal NPN Bipolar Transistor 100 mA, 45 V, 3-Pin SOT-23 BC847A-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC847A-7-F
Width 2.5mm
Mount Type Surface
Series BC847A
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
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RS Stock No. 711-4840PBrand: DiodesZetexManufacturers Part No.: BC847A-7-F
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor supports a maximum DC collector current of 100 mA.
  • Maximum collector emitter voltage rating is 45 volts.
  • It comes in a 3-pin SOT-23 surface mount package.
  • Designed for operation within a temperature range of -65°C to 150°C.
  • The transistor features a minimum DC current gain (hFE) of 110.
  • The maximum power dissipation is 300 mW ensuring efficient thermal performance.
  • It exhibits a maximum transition frequency of 300 MHz for high-frequency applications.
  • This transistor complies with the automotive standard AEC-Q101 for reliability.

Product Description

DiodesZetex BC847A-7-F is a small signal NPN bipolar transistor featuring a maximum DC collector current of 100 mA and a collector emitter voltage rating of 45 V. Packaged in a compact 3-pin SOT-23 surface mount type, it is suitable for a variety of industrial and electronic semiconductor uses, including communications, control circuits, and switching applications.

This transistor is rated for a maximum power dissipation of 300 mW and operates efficiently over a temperature range from -65°C to 150°C, making it reliable in harsh industrial and automotive environments. It complies with the automotive standard AEC-Q101, ensuring high quality and durability for automotive electronics.

The BC847A-7-F has a minimum DC current gain (hFE) of 110 and supports a maximum transition frequency of 300 MHz, suitable for high-speed switching and RF amplification. Its compact size with dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height allows for space-saving PCB designs.

The transistor polarity is NPN with a single transistor configuration, commonly used in signal amplification and switching. Mounting is surface mount type which facilitates automated assembly processes and improved manufacturing efficiency.

Maximum DC collector current: 100 mA. Maximum collector emitter voltage: 45 V. Package type: 3-pin SOT-23 surface mount. Operating temperature range: -65°C to 150°C. Minimum DC current gain (hFE): 110. Maximum power dissipation: 300 mW.

Maximum transition frequency: 300 MHz. Automotive standard compliant: AEC-Q101. Dimensions: 3 mm (length) × 2.5 mm (width) × 1.1 mm (height). Polarity: NPN, single transistor configuration.

This transistor is widely applicable in industrial electronics, automotive, manufacturing, and laboratory environments that require reliable switching and amplification components. It supports superior thermal management and frequency response in compact electronic assemblies.

Explore more Bipolar Transistors and discrete semiconductor components for industrial and electronic manufacturing at EnvMart.

DiodesZetex Small Signal NPN Bipolar Transistor 100 mA, 45 V, 3-Pin SOT-23 BC847A-7-F
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

The collector emitter voltage rating is 45 V.

It operates efficiently within a temperature range of -65°C to 150°C.

The BC847A-7-F comes in a 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) is 110.

The maximum power dissipation is 300 mW.

It has a maximum transition frequency of 300 MHz.

This transistor complies with the automotive standard AEC-Q101.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It has a single NPN transistor configuration.

It uses a surface mount type for installation.

The maximum emitter base voltage (VEBO) is 6 V.

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