onsemi Small Signal NPN Transistor 100 mA 65 V Surface Mount SOT-363 6-Pin BC846BDW1T1G

onsemi BC846BDW1T1G is a high-performance small signal NPN bipolar junction transistor designed for surface mount applications. It supports a maximum collector current of 100 mA and a maximum collector-emitter voltage of 65 V. The transistor is housed in a compact 6-pin SOT-363 package, facilitating easy integration on printed circuit boards where space is critical.

With a maximum power dissipation of 380 mW and a high DC current gain of at least 200, this transistor ensures efficient amplification and reliable switching performance. It operates efficiently over a wide temperature range from -55°C up to 150°C, making it suitable for various industrial and automotive environments.

The transistor's transition frequency of 100 MHz allows it to be used in high-frequency signal processing and switching circuits. It conforms to the automotive quality standard AEC-Q101, ensuring robust quality and reliability required in automotive electronics.

Compact physical dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height provide versatility in dense circuit designs. The isolated transistor configuration enhances performance by reducing electrical interference.

This transistor is commonly used in industrial electronics, PCB assemblies, and electronic component manufacturing. Its durability and high specification make it a reliable choice for demanding applications.

This transistor supports surface mount technology for efficient PCB integration. It features a maximum power dissipation of 380 mW for reliable operation. The device has a minimum DC current gain (hFE) of 200 ensuring good amplification.

Operating temperature ranges from -55°C to 150°C allow use in diverse environments. Its transition frequency is 100 MHz, suitable for high-frequency applications. Complies with AEC-Q101 automotive standard, qualifying it for automotive use.

The isolated transistor configuration provides electrical isolation and improved performance. Compact dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height enable space-saving designs. This NPN transistor is ideal for applications in industrial electronics and electronic component assemblies.

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