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onsemi 500 mA PNP Bipolar Transistor, -300 V, 4-Pin SOT-223 Package PZTA92T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.8mm
Length 6.7mm
Model PZTA92T1G
Width 7.3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
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RS Stock No. 690-0123PBrand: onsemiManufacturers Part No.: PZTA92T1G
Pin Count 4
Maximum Collector Emitter Voltage Vceo -300V
Minimum DC Current Gain hFE 25
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz

Key Features

  • Supports a maximum DC collector current of 500 mA.
  • Maximum collector emitter voltage of -300 V and collector base voltage of 300 V.
  • Single transistor configuration with PNP polarity.
  • Offers a minimum DC current gain (hFE) of 25 and maximum power dissipation of 1.5 W.
  • Operating temperature ranges from -55°C to 150°C for reliable performance.
  • Surface mount package type SOT-223 with 4 pins for easy PCB integration.
  • Transition frequency up to 50 MHz suitable for various switching and amplification applications.

Product Description

The onsemi PZTA92T1G is a robust PNP bipolar transistor designed for high voltage and moderate current applications. Featuring a maximum DC collector current of 500 mA and a collector emitter voltage of -300 V, this transistor is housed in a compact 4-pin SOT-223 surface mount package that facilitates efficient PCB mounting for industrial and commercial electronic circuits.

This transistor's single configuration and PNP polarity make it suitable for general switching and amplification tasks in electronic designs requiring reliable operation over a wide temperature range from -55°C up to 150°C. The device supports a minimum DC current gain (hFE) of 25, ensuring effective signal amplification.

With a maximum power dissipation rating of 1.5 W and a transition frequency of 50 MHz, the PZTA92T1G meets the demands of industrial, commercial, and laboratory equipment requiring durable discrete semiconductor components. Its physical dimensions (6.7 mm length, 7.3 mm width, and 1.8 mm height) and SOT-223 package type make it ideal for compact electronic assemblies.

It is suitable for discrete semiconductor applications in power management, switching circuits, and amplification devices. Supports a maximum collector current of 500 mA for moderate power applications. Handles high voltage levels with a collector emitter voltage of -300 V for enhanced durability.

Surface mount 4-pin SOT-223 package ensures ease of integration into modern PCB layouts. Wide operating temperature range enables use in harsh industrial environments. Power dissipation capability of 1.5 W supports stable operation under load.

Explore the Electronics & Electricals category for more high-quality discrete semiconductors and Bipolar Transistors to support your electronic design requirements.

onsemi 500 mA PNP Bipolar Transistor, -300 V, 4-Pin SOT-223 Package PZTA92T1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

It has a maximum collector emitter voltage rating of -300 V.

The transition frequency of the PZTA92T1G is up to 50 MHz.

The dimensions of the SOT-223 package are 6.7 mm in length, 7.3 mm in width, and 1.8 mm in height.

This transistor operates within a temperature range of -55°C to 150°C.

It offers a minimum DC current gain (hFE) of 25.

The maximum power dissipation rating for this model is 1.5 W.

The PZTA92T1G features a single transistor configuration with PNP polarity.

The maximum collector base voltage for this transistor is 300 V.

This model has a surface mount type in a 4-pin configuration.

It is suitable for general switching and amplification tasks in electronic designs.

The country of origin for this model is India.

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