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onsemi Silicon Junction Switching Diode 3-Pin SOT-23 100 V 215 mA 225 mW BAV99LT3G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.94mm
Length 2.9mm
Model BAV99LT3G
Width 1.3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
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RS Stock No. 690-0016Brand: onsemiManufacturers Part No.: BAV99LT3GDistrelec Article No.: 30424105
Pin Count 3
Maximum Power Dissipation Pd 225mW
Diode Configuration Series
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 215mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V
onsemi 70 V 715 mA Diode General Purpose 3-Pin SOT-23Brand onsemi

Key Features

  • This diode supports a maximum power dissipation of 225 mW ensuring reliable operation.
  • The device features a fast peak reverse recovery time of 6 nanoseconds enhancing switching performance.
  • It operates effectively across a wide temperature range from -65°C up to 150°C.
  • The package dimensions are compact with a height of 0.94 mm, length of 2.9 mm, and width of 1.3 mm, suitable for dense circuit board layouts.
  • The diode has a maximum forward voltage of 1.25 V, supporting efficient conduction.
  • Designed without specific automotive certification but meets standard industrial requirements.
  • Its 3-pin configuration and surface mount design ease PCB assembly and integration in electronic applications.

Product Description

onsemi BAV99LT3G Silicon Junction Switching Diode is a high-performance discrete semiconductor designed for fast switching applications. This diode is built in a compact 3-pin SOT-23 surface mount package, making it ideal for space-constrained electronic designs. The diode's maximum forward current rating is 215 mA, supported by a peak reverse voltage of 100 V, making it suitable for a wide range of power management and signal conditioning roles.

It features a maximum power dissipation of 225 mW, enabling reliable and efficient operation under typical circuit conditions. The fast peak reverse recovery time of 6 ns ensures minimal switching loss and high-frequency efficiency essential for advanced electronic and industrial uses.

The diode operates across a robust temperature range, from a minimum operating temperature of -65°C to a maximum of 150°C, accommodating demanding environments such as industrial controls, telecommunications equipment, and consumer electronics.

Compact physical dimensions of 2.9 mm length, 1.3 mm width, and 0.94 mm height allow easy integration into densely populated printed circuit boards. The device’s maximum forward voltage of 1.25 V facilitates low conduction losses in switching and signal circuits.

While this diode does not carry automotive certification, it complies with standard industrial quality and reliability standards. Its 3-pin surface mount configuration simplifies automated PCB assembly in manufacturing processes.

This diode supports a maximum power dissipation of 225 mW ensuring reliable operation. The device features a fast peak reverse recovery time of 6 nanoseconds enhancing switching performance. It operates effectively across a wide temperature range from -65°C up to 150°C.

The package dimensions are compact with a height of 0.94 mm, length of 2.9 mm, and width of 1.3 mm, suitable for dense circuit board layouts. The diode has a maximum forward voltage of 1.25 V, supporting efficient conduction.

Designed without specific automotive certification but meets standard industrial requirements. Its 3-pin configuration and surface mount design ease PCB assembly and integration in electronic applications.

This diode is suitable for use in electronics manufacturing, industrial equipment, telecommunications, and power management circuits requiring reliable fast switching semiconductor components. Explore a comprehensive selection of discrete semiconductors and Switching Diodes at EnvMart for your industrial and engineering needs.

onsemi Silicon Junction Switching Diode 3-Pin SOT-23 100 V 215 mA 225 mW BAV99LT3G
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Frequently Asked Questions

The maximum power dissipation of this diode is 225 mW, ensuring reliable operation under typical circuit conditions.

The peak reverse recovery time for this model is 6 nanoseconds, which enhances its switching performance.

It operates effectively across a temperature range from -65°C to 150°C, accommodating demanding environments.

The package dimensions are 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height, making it suitable for dense circuit board layouts.

The maximum forward current rating is 215 mA, allowing it to handle significant current in applications.

The maximum forward voltage for this diode is 1.25 V, which supports efficient conduction in circuits.

This model features a surface mount design, simplifying PCB assembly and integration.

The peak reverse voltage rating is 100 V, making it suitable for various power management applications.

This diode is suitable for electronics manufacturing, industrial equipment, telecommunications, and power management circuits.

The diode has a 3-pin configuration, facilitating easy integration into electronic designs.

The sub-type of this diode is Silicon Junction, designed for fast switching applications.

This model does not carry specific automotive certification but meets standard industrial quality and reliability requirements.

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