onsemi Silicon Junction Switching Diode, Common Cathode, 200 mA, 100 V, 3-Pin SOT-23 BAV70LT3G

onsemi BAV70LT3G Silicon Junction Switching Diode is a discrete semiconductor device designed for high-speed switching and signal processing applications. Featuring a common cathode configuration and housed in a compact 3-pin SOT-23 surface mount package, this diode supports a maximum forward current of 200 mA and a peak reverse repetitive voltage rating of 100 volts. Its silicon junction construction provides efficient electrical characteristics suitable for modern electronic circuits.

The diode's maximum power dissipation is 225 milliwatts, enabling dependable operation in various industrial and laboratory environments. Its fast peak reverse recovery time of 6 nanoseconds makes it ideal for switching tasks where signal integrity and speed are critical. The device operates reliably over a broad temperature range from -55°C to 150°C, supporting harsh environmental conditions often encountered in manufacturing and commercial electronics.

Physical dimensions are optimized for dense PCB layouts, with a length of 2.9 mm, width of 1.3 mm, and height of 0.94 mm. This makes it a practical choice for compact electronic assemblies. The forward voltage drop is capped at 1.25 V, ensuring low conduction losses during operation. With a peak non-repetitive forward surge current capacity of 500 mA, the diode can handle transient surges without damage, enhancing circuit robustness.

This onsemi diode is suitable for applications in industrial systems, electronic instrumentation, signal switching, and other areas requiring reliable diode performance. Its robust specifications, compact size, and electrical attributes position it as an essential component in discrete semiconductor portfolios.

Designed as a silicon junction switching diode with low leakage current. Package features a compact surface mount SOT-23 form factor with 3 pins. Maximum power dissipation rating of 225 mW ensures reliable operation under typical load conditions.

Fast peak reverse recovery time of 6 nanoseconds suitable for high-speed switching applications. Operates reliably across a temperature range of -55°C to 150°C. Forward voltage drop is 1.25 V maximum, optimizing efficiency.

Peak non-repetitive forward surge current of 500 mA for transient tolerance. Physical dimensions are 2.9 mm length, 1.3 mm width, and 0.94 mm height for compact PCB mounting. Suitable for industrial and electronic equipment requiring durable discrete semiconductor components.

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