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onsemi Silicon Junction Switching Diode, Common Cathode, 200 mA, 100 V, 225 mW SOT-23 BAV70LT3G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.94mm
Length 2.9mm
Model BAV70LT3G
Width 1.3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
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RS Stock No. 690-0013Brand: onsemiManufacturers Part No.: BAV70LT3G
Pin Count 3
Maximum Power Dissipation Pd 225mW
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 500mA
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • Common cathode diode configuration suitable for switching applications.
  • Maximum forward current rating of 200 mA with 225 mW power dissipation.
  • Compact SOT-23 surface mount package with 3 pins for efficient PCB mounting.
  • Peak reverse recovery time of 6 nanoseconds for fast switching performance.
  • Operating temperature range from -55°C to 150°C ensures reliability in various environments.
  • Maximum forward voltage drop of 1.25 V enhances efficiency.
  • High peak non-repetitive forward surge current capability of 500 mA.
  • Package dimensions approximately 2.9 mm length, 1.3 mm width, and 0.94 mm height.

Product Description

onsemi BAV70LT3G is a silicon junction switching diode with a common cathode configuration designed for surface mount applications. Housed in a compact SOT-23 package with three pins, it supports a maximum forward current of 200 mA and a peak repetitive voltage of 100 V, making it ideal for low power switching tasks in electronic circuits.

The diode features a maximum power dissipation of 225 mW and a fast peak reverse recovery time of 6 nanoseconds, enabling efficient switching operation with minimal loss. Its forward voltage drop is rated at 1.25 V, optimizing conduction efficiency while maintaining robustness.

Engineered to operate reliably within a wide temperature range from -55°C to 150°C, this diode ensures performance stability under both cold and hot environmental conditions. Additionally, it can handle a peak non-repetitive forward surge current of 500 mA for transient protection.

The physical dimensions are approximately 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height, suitable for tight PCB layouts. This device is not certified under automotive standards but fulfills the needs for various industrial, laboratory, electronics manufacturing, and general-purpose switching applications.

Common cathode diode configuration suitable for switching applications. Maximum forward current rating of 200 mA with 225 mW power dissipation. Compact SOT-23 surface mount package with 3 pins for efficient PCB mounting.

Peak reverse recovery time of 6 nanoseconds for fast switching performance. Operating temperature range from -55°C to 150°C ensures reliability in various environments. Maximum forward voltage drop of 1.25 V enhances efficiency.

High peak non-repetitive forward surge current capability of 500 mA. Package dimensions approximately 2.9 mm length, 1.3 mm width, and 0.94 mm height. Designed without automotive standard qualification but suitable for general electronic components.

This onsemi switching diode BAV70LT3G is widely used in industrial electronics, laboratory equipment, and general electronic circuit designs requiring reliable switching components. For more components and related electronic parts, explore EnvMart's extensive catalog of discrete semiconductors and Switching Diodes.

onsemi Silicon Junction Switching Diode, Common Cathode, 200 mA, 100 V, 225 mW SOT-23 BAV70LT3G
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Frequently Asked Questions

The maximum forward current rating of this diode is 200 mA.

It has a peak reverse recovery time of 6 nanoseconds, allowing for fast switching performance.

This diode operates reliably within a temperature range of -55°C to 150°C.

The package dimensions are approximately 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height.

The maximum power dissipation for the BAV70LT3G is 225 mW.

It can handle a peak non-repetitive forward surge current of 500 mA.

The maximum forward voltage drop is rated at 1.25 V, enhancing conduction efficiency.

This model features a 3-pin configuration, suitable for surface mount applications.

It utilizes a common cathode diode configuration, making it suitable for switching applications.

The maximum peak reverse repetitive voltage is 100 V.

The brand of this diode is onsemi.

It is suitable for various industrial, laboratory, and general-purpose switching applications in electronic circuits.

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