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STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220 STP140NF75
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP140NF75 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 310W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 120 amperes for robust performance.
- Maximum drain-source voltage rating of 75 volts suitable for medium voltage applications.
- Low on-resistance with a maximum Rds(on) of 8 milliohms to reduce conduction losses.
- TO-220 through-hole package with 3 pins for easy PCB mounting.
- Wide operating temperature range from -55°C to 175°C ensuring reliability in demanding environments.
- Maximum power dissipation of 310 watts for handling high power loads.
- Enhancement mode channel type with N-channel configuration.
- Maximum gate-source voltage between -20 and +20 volts for gate control flexibility.
Product Description
STMicroelectronics STP140NF75 is a high-performance STripFET II N-Channel MOSFET designed for efficient power switching and control applications. It features a 3-pin TO-220 through-hole package that provides excellent thermal dissipation and facilitates mounting on standard printed circuit boards.
This MOSFET supports a maximum continuous drain current of 120 amperes and a maximum drain-source voltage of 75 volts, making it suitable for medium voltage and high current operation in industrial, automotive, and consumer electronics sectors.
The device employs enhancement mode operation with an N-channel configuration, offering a low on-resistance of 8 milliohms to minimize conduction losses and improve overall circuit efficiency. It can dissipate up to 310 watts of power, supporting high load conditions reliably.
Operating temperature ranges from -55°C to 175°C, enabling usage in harsh and variable temperature environments while maintaining stable performance. The maximum gate-source voltage of ±20 volts provides flexibility in switching and control circuits.
The typical gate charge of 160 nC and a forward voltage drop of about 1.5 V ensure fast switching speeds and efficient operation suitable for power management, motor control, and switching power supplies.
Its package type and specifications make it ideal for industrial electronics, manufacturing equipment, power management systems, automotive electronics, and various commercial applications requiring reliable and efficient MOSFET components.
Maximum continuous drain current of 120 amperes for high load handling. Maximum drain-source voltage of 75 volts suitable for power circuits. Low on-resistance allows for efficient conduction. TO-220 package ensures effective thermal management and durability.
Wide temperature operating range for diverse environments. Enhanced switching capabilities with optimized gate charge and voltage ratings. Suitable for automotive, industrial, and consumer electronics applications. Through-hole mounting enables easy PCB assembly.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 amperes, allowing it to handle high load conditions effectively.
This MOSFET has a maximum drain-source voltage rating of 75 volts, making it suitable for medium voltage applications.
It features a low on-resistance with a maximum Rds(on) of 8 milliohms, which helps to reduce conduction losses.
The TO-220 package has dimensions of 10.4mm in length, 4.6mm in width, and 9.15mm in height.
This unit operates within a wide temperature range from -55°C to 175°C, ensuring reliability in various environments.
It can dissipate up to 310 watts, which supports high power loads effectively.
The device uses a through-hole mounting type, which facilitates easy PCB assembly.
The maximum gate-source voltage for this model is ±20 volts, providing flexibility for gate control.
The typical gate charge is 160 nC, which contributes to its fast switching capabilities.
This model is suitable for industrial electronics, automotive electronics, power management systems, and various consumer electronics applications.
It features an N-channel configuration with enhancement mode operation, which is common for power switching applications.
The country of origin for this MOSFET is India.
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