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STMicroelectronics SuperMESH N-Channel Power MOSFET 4 A 600 V Enhancement 3-Pin TO-263 STB4NK60ZT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB4NK60ZT4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC JESD97 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 18.8nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- The device features a low maximum drain-source resistance of 2 ohms for efficient power management.
- It supports a maximum power dissipation of 70 W and operates up to 150°C maximum temperature.
- The enhanced channel mode ensures reliable performance with gate charge of 18.8 nC at Vgs.
- Designed for surface mount applications, it measures 10.4 mm length, 9.35 mm width, and 4.6 mm height.
- Compatible with JEDEC JESD97 standards providing quality assurance.
- Operates over a wide temperature range from -55°C to +150°C for industrial use.
Product Description
STMicroelectronics STB4NK60ZT4 is a SuperMESH N-Channel Enhancement Mode Power MOSFET designed for high voltage and current applications. It delivers a continuous drain current of 4 A and withstands a maximum drain-source voltage of 600 V. The device comes in a 3-pin TO-263 surface mount package suitable for compact power circuits requiring efficient switching.
This MOSFET features a low maximum drain-source resistance of 2 ohms, enhancing energy efficiency in power management applications. It has a typical gate charge of 18.8 nC at Vgs, allowing fast switching and reduced losses. Forward voltage is rated at 1.6 V, balancing conduction and switching performance.
The component operates reliably across a wide temperature range from -55°C up to a maximum of 150°C, making it ideal for demanding industrial, automotive (non-automotive standard compliant), HVAC, and manufacturing environments. Its dimensions - 10.4 mm length, 9.35 mm width, and 4.6 mm height - allow easy integration into densely packed circuit boards.
Compliant with JEDEC JESD97 standards, the STB4NK60ZT4 ensures high quality and consistency. It supports surface mount assembly and provides stable operation with a gate-source voltage rating of -30 to +30 V.
Applications include power converters, motor drivers, and industrial power controls where efficient N-Channel switching devices are required. This robust MOSFET supports enhancement mode operation enhancing switching effectiveness and system performance.
The device offers a maximum continuous drain current of 4 A and a voltage rating of 600 V. Low Rds(on) value of 2 ohms optimizes conduction losses in power applications. Operates from -55°C to 150°C ensuring durability in harsh environments.
3-pin TO-263 surface mount package facilitates compact PCB layouts. Typical gate charge of 18.8 nC enables fast switching performance. Explore more STMicroelectronics power semiconductors at EnvMart for reliable industrial and electronic component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
It withstands a maximum drain-source voltage of 600 V.
The maximum power dissipation is rated at 70 W.
The dimensions of the TO-263 package are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
The typical gate charge at Vgs is 18.8 nC.
The maximum operating temperature is 150°C.
It operates reliably from -55°C to 150°C.
This model features an N-channel enhancement mode.
The maximum drain-source resistance is 2 ohms.
It complies with JEDEC JESD97 standards.
It is suitable for applications such as power converters, motor drivers, and industrial power controls.
The forward voltage is rated at 1.6 V.
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