World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 900 V, 5.8 A, Enhancement Mode, TO-263 Package STB6NK90ZT4

Free Delivery in India | Lowest Global Shipping Charges

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 900 V, 5.8 A, Enhancement Mode, TO-263 Package STB6NK90ZT4

Name: STMicroelectronics MDmesh SuperMESH N-Channel MOSFET, 900 V, 5.8 A, Enhancement Mode, TO-263 Package STB6NK90ZT4
Brand: STMicroelectronics
SKU: 350370
Price: 3.4 USD
Availability: InStock



Category MOSFETs Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	4.6mm
Length	10.4mm
Model	STB6NK90ZT4
Width	9.35mm
Mount Type	Surface
Series	MDmesh, SuperMESH
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	5.8A
Maximum Drain Source Voltage Vds	900V
Maximum Drain Source Resistance Rds	2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	140W
Typical Gate Charge Qg @ Vgs	46.5nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.6V

Key Features

This N-channel MOSFET features a maximum power dissipation of 140 W.
The device operates within a temperature range of -55°C to 150°C.
Maximum gate-source voltage rating is ±30 V.
Typical gate charge at Vgs is 46.5 nC, ensuring efficient switching performance.
The package dimensions are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
It has a maximum drain-source resistance of 2 Ω suitable for power applications.
The forward voltage drop is 1.6 V making it efficient for rapid switching.
The MOSFET is surface mountable, designed in a TO-263 package with 3 pins.

Product Description

STMicroelectronics STB6NK90ZT4 MDmesh SuperMESH N-Channel MOSFET is engineered for industrial and electronic applications requiring high-voltage switching and efficient power management. Rated at 900 V and 5.8 A maximum continuous drain current, it is optimized for high performance in enhancement mode with low gate charge for reduced switching losses.

The TO-263 surface-mount package offers compactness with dimensions 10.4 mm length, 9.35 mm width, and 4.6 mm height, suitable for PCB assembly in power supply circuits, motor controls, and power management systems. It withstands harsh environmental conditions with operating temperatures ranging from -55°C to 150°C.

This MOSFET delivers reliable performance with a maximum power dissipation of 140 W, and a maximum drain-source resistance of 2 Ω, ensuring minimal conduction losses. The device supports a maximum gate-source voltage of ±30 V and features a forward voltage of 1.6 V, enabling efficient response and stable switching.

Widely used in industrial electronic equipment, power supplies, and semiconductor circuits, STB6NK90ZT4 provides trusted performance in demanding applications such as automation, manufacturing, and power electronics.

This N-channel MOSFET supports surface mount installation in a 3-pin TO-263 package. Maximum continuous drain current of 5.8 A and maximum drain-source voltage of 900 V. Designed for enhancement mode operation with a typical gate charge of 46.5 nC.

Operating temperature range from -55°C to 150°C for durability in various environments. Low maximum drain-source resistance at 2 Ω ensures efficient conduction. Maximum power dissipation rating of 140 W suitable for high power designs.

Compact dimensions support integration in dense PCB layouts.

STMicroelectronics products such as the STB6NK90ZT4 MOSFET are integral to high-performance industrial and commercial electronic systems. Explore more in our Electronics & Electricals category for advanced semiconductor components and power devices.

Explore more products in our MOSFETs category.