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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 5.4A 400V Enhancement Mode TO-252 STD7NK40ZT4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD7NK40ZT4
Width 6.2mm
Mount Type Surface
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 5.4A
Maximum Drain Source Voltage Vds 400V
Maximum Drain Source Resistance Rds 1Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 70W
Typical Gate Charge Qg @ Vgs 19nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • This MOSFET features an enhancement mode N-Channel design for high efficiency.
  • The package type is TO-252 with surface mount design and 3 pins for connectivity.
  • Maximum power dissipation of 70 W supports high load applications.
  • Operating temperatures range from -55°C minimum to 150°C maximum for robust performance.
  • Typical gate charge is 19 nC at Vgs, supporting fast switching.
  • Maximum gate source voltage ranges from -30 V to +30 V, allowing flexible control.
  • Drain source resistance is low at 1Ω, improving conduction efficiency.
  • Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height aid in PCB space saving.

Product Description

STMicroelectronics STD7NK40ZT4 is a N-Channel MDmesh™ SuperMESH™ MOSFET designed for electronic applications requiring efficient power switching and amplification. This device supports a maximum continuous drain current of 5.4 A and a maximum drain source voltage of 400 V, suitable for power electronics circuits including power supplies, motor drives, and switching regulators.

Packaged in a compact TO-252 surface mount package with 3 pins, the MOSFET ensures easy integration onto modern PCB assemblies. Its enhancement mode channel operation provides reliable switching performance with a typical gate charge of 19 nC, enabling faster switching speeds and reduced switching losses.

With a maximum power dissipation rating of 70 W and operating temperature range from -55°C to 150°C, the STD7NK40ZT4 is engineered for industrial, commercial, and consumer electronic devices requiring thermal robustness and longevity. The device features a maximum gate source voltage tolerance of -30 V to +30 V and maintains low drain source resistance of 1Ω for minimal conduction losses.

This MOSFET has dimensions that promote space-saving designs: 6.6 mm length, 6.2 mm width, and 2.4 mm height, supporting compact and lightweight assemblies without compromising performance.

This N-Channel MOSFET offers an efficient enhancement mode operation. It provides high maximum continuous drain current of 5.4 A. Maximum drain source voltage is rated at 400 V for power applications. Low on-resistance of 1Ω reduces conduction losses.

TO-252 package design allows for surface mounting on PCBs. Supports a wide temperature range from -55°C to 150°C. Gate charge is optimized at 19 nC for fast switching. Compact physical dimensions aid design flexibility.

This product is suitable for various applications including industrial electronics, power management systems, consumer electronics, and embedded systems. Engineers and designers can rely on its robust ratings and compact footprint within their semiconductor selections. Discover more products in the MOSFET category to meet all your power semiconductor requirements at EnvMart.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 5.4A 400V Enhancement Mode TO-252 STD7NK40ZT4
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.4 A.

This MOSFET has a maximum drain source voltage rating of 400 V.

It is packaged in a TO-252 surface mount type.

The typical gate charge at Vgs is 19 nC.

The operating temperature range is from -55°C to 150°C.

The maximum power dissipation is rated at 70 W.

The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.

The maximum drain source resistance is 1Ω.

This MOSFET features a pin count of 3.

It has an N-channel enhancement mode design.

The maximum gate source voltage ranges from -30 V to +30 V.

This model is suitable for power electronics circuits including power supplies, motor drives, and switching regulators.

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