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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD7NK40ZT4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.4A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STD7NK40ZT4 is a N-Channel MDmesh™ SuperMESH™ MOSFET designed for electronic applications requiring efficient power switching and amplification. This device supports a maximum continuous drain current of 5.4 A and a maximum drain source voltage of 400 V, suitable for power electronics circuits including power supplies, motor drives, and switching regulators.
Packaged in a compact TO-252 surface mount package with 3 pins, the MOSFET ensures easy integration onto modern PCB assemblies. Its enhancement mode channel operation provides reliable switching performance with a typical gate charge of 19 nC, enabling faster switching speeds and reduced switching losses.
With a maximum power dissipation rating of 70 W and operating temperature range from -55°C to 150°C, the STD7NK40ZT4 is engineered for industrial, commercial, and consumer electronic devices requiring thermal robustness and longevity. The device features a maximum gate source voltage tolerance of -30 V to +30 V and maintains low drain source resistance of 1Ω for minimal conduction losses.
This MOSFET has dimensions that promote space-saving designs: 6.6 mm length, 6.2 mm width, and 2.4 mm height, supporting compact and lightweight assemblies without compromising performance.
This N-Channel MOSFET offers an efficient enhancement mode operation. It provides high maximum continuous drain current of 5.4 A. Maximum drain source voltage is rated at 400 V for power applications. Low on-resistance of 1Ω reduces conduction losses.
TO-252 package design allows for surface mounting on PCBs. Supports a wide temperature range from -55°C to 150°C. Gate charge is optimized at 19 nC for fast switching. Compact physical dimensions aid design flexibility.
This product is suitable for various applications including industrial electronics, power management systems, consumer electronics, and embedded systems. Engineers and designers can rely on its robust ratings and compact footprint within their semiconductor selections. Discover more products in the MOSFET category to meet all your power semiconductor requirements at EnvMart.
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