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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 3 A 900 V Enhancement 3-Pin TO-252 STD3NK90ZT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD3NK90ZT4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 4.8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 22.7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- MDmesh SuperMESH technology enhances switching speed and reduces losses.
- TO-252 package ensures easy surface mounting and compact integration.
- Maximum drain current of 3 A suitable for moderate power applications.
- High drain-source voltage of 900 V for robust operation.
- Low typical gate charge of 22.7 nC enables fast switching.
- Maximum power dissipation of 90 W supports high power conditions.
- Wide operating temperature range from -55°C to 150°C for reliability.
- Low maximum drain-source resistance of 4.8Ω minimizes conduction losses.
Product Description
STMicroelectronics presents the STD3NK90ZT4, a high-performance MDmesh SuperMESH N-Channel MOSFET designed for industrial and power electronics applications. Featuring a maximum continuous drain current of 3 A and a high drain-source voltage rating of 900 V, this enhancement mode MOSFET packaged in a compact TO-252 format offers excellent switching capabilities and durability.
With MDmesh SuperMESH technology, the device achieves reduced switching losses and enhanced efficiency, making it suitable for power conversion, inverter circuits, and motor control in industrial, manufacturing, and commercial HVAC environments.
The device is rated for a maximum power dissipation of 90 W and operates reliably within a temperature range of -55°C to 150°C, ensuring stability even in demanding conditions. A low typical gate charge of 22.7 nC allows for fast switching, improving overall system efficiency.
The STD3NK90ZT4 features a low maximum drain-source resistance of 4.8Ω, minimizing conduction losses and heat generation during operation. Its 3-pin TO-252 package facilitates surface mount applications in compact PCB designs.
MDmesh SuperMESH technology enhances switching speed and reduces losses. TO-252 surface mount package for space-efficient PCB integration. High voltage rating of 900 V and current capacity of 3 A for versatile power handling.
Low gate charge ensures efficient gate control and fast switching. Wide temperature operation range from -55°C to 150°C for reliability. Maximum power dissipation of 90 W supports heavy-duty applications. Low drain-source resistance improves conduction efficiency.
Forward voltage of 1.6 V for effective conduction. 3-pin configuration simplifies circuit design and mounting.
This MOSFET is ideal for applications in power supplies, industrial automation, motor drives, and other demanding electrical and electronic devices. The robust design meets the needs of engineers seeking reliability and performance in harsh operating conditions.
Explore a comprehensive range of semiconductor solutions like the STD3NK90ZT4 from STMicroelectronics on EnvMart for advanced power management and precision electronic control.
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Frequently Asked Questions
The maximum continuous drain current for the STD3NK90ZT4 is 3 A.
This MOSFET has a high drain-source voltage rating of 900 V.
The typical gate charge for this model is 22.7 nC, which allows for fast switching.
The maximum power dissipation for the STD3NK90ZT4 is 90 W.
It operates reliably within a temperature range from -55°C to 150°C.
The maximum drain-source resistance is 4.8Ω, which helps minimize conduction losses.
The STD3NK90ZT4 is packaged in a TO-252 format, suitable for surface mounting.
This model features a 3-pin configuration, simplifying circuit design and mounting.
It is suitable for applications in power supplies, industrial automation, motor drives, and other demanding electrical devices.
The forward voltage for the STD3NK90ZT4 is 1.6 V, which is effective for conduction.
This model belongs to the MDmesh and SuperMESH series.
The channel type of this MOSFET is N-channel, operating in enhancement mode.
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