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STMicroelectronics N-Channel STripFET II MOSFET 120 A, 40 V Enhancement Mode, TO-263 3-Pin STB100NF04T4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 4.6mm
Length 10.4mm
Model STB100NF04T4
Width 9.35mm
Mount Type Surface
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 120A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 110nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • Supports surface mount assembly with TO-263 package type.
  • Features enhancement mode channel for efficient switching.
  • Maximum drain-source resistance of 5 milliohms ensures low conduction losses.
  • Handles a maximum power dissipation of 300 watts under operation.
  • Operates reliably between temperatures of -55°C to 175°C.
  • Typical gate charge of 110 nanocoulombs for fast switching performance.
  • Complies with automotive standard AEC-Q101 for automotive applications.
  • Physical dimensions are 10.4 mm length, 9.35 mm width, and 4.6 mm height.

Product Description

The STMicroelectronics STB100NF04T4 is a high-performance N-Channel STripFET II MOSFET designed for power switching applications. This device offers a remarkable maximum continuous drain current of 120 A and a drain-source voltage of 40 V, implemented in a compact 3-pin TO-263 package optimized for surface mounting.

Featuring an enhancement mode channel, it provides ultra-low gate charge of 110 nC which facilitates efficient switching and reduced power loss. The MOSFET has a low on-resistance of 5 milliohms, ensuring minimal conduction losses during high current flow. It can dissipate power up to 300 W, making it suitable for demanding power management and conversion circuits.

The device operates over a wide temperature range from -55°C to 175°C, and meets the stringent automotive standard AEC-Q101, demonstrating robustness for automotive and industrial applications. With typical gate-source voltages ranging from -20 to +20 V and a forward voltage drop of 1.3 V, this MOSFET ensures reliable performance in high-speed switching environments.

The physical dimensions of the device are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height, allowing for convenient PCB layout designs. Supports surface mount assembly with TO-263 package type. Features enhancement mode channel for efficient switching.

Maximum drain-source resistance of 5 milliohms ensures low conduction losses. Handles a maximum power dissipation of 300 watts under operation. Operates reliably between temperatures of -55°C to 175°C. Typical gate charge of 110 nanocoulombs for fast switching performance.

Complies with automotive standard AEC-Q101 for automotive applications. Physical dimensions are 10.4 mm length, 9.35 mm width, and 4.6 mm height. Gate-source voltage range from -20 V to +20 V with a forward voltage of 1.3 V.

This MOSFET is applicable in various industrial, automotive, and consumer power electronics circuits requiring high efficiency and power density. Its compliance with automotive specs makes it suitable for vehicle powertrain and control systems. For high reliability switching in power inverters, motor controllers, or DC-DC converters, the STB100NF04T4 provides an optimal solution.

Explore our extensive collection of high-quality discrete semiconductors in the MOSFET category to find complementary devices for your designs at EnvMart.

STMicroelectronics N-Channel STripFET II MOSFET 120 A, 40 V Enhancement Mode, TO-263 3-Pin STB100NF04T4
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Frequently Asked Questions

The maximum continuous drain current for this model is 120 A.

It has a maximum drain-source voltage of 40 V.

This MOSFET is packaged in a TO-263 type, suitable for surface mount assembly.

It can handle a maximum power dissipation of 300 watts during operation.

This model operates reliably between -55°C and 175°C.

The typical gate charge is 110 nanocoulombs (nC), facilitating efficient switching performance.

The maximum gate-source voltage is -20 V to +20 V.

The forward voltage drop is 1.3 V.

It features a maximum drain-source resistance of 5 milliohms (mΩ), ensuring low conduction losses.

It complies with the automotive standard AEC-Q101, making it suitable for automotive applications.

The physical dimensions are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.

This model features an enhancement mode N-channel, which is designed for efficient switching applications.

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