$5.03
$4.88
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB100NF04T4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
The STMicroelectronics STB100NF04T4 is a high-performance N-Channel STripFET II MOSFET designed for power switching applications. This device offers a remarkable maximum continuous drain current of 120 A and a drain-source voltage of 40 V, implemented in a compact 3-pin TO-263 package optimized for surface mounting.
Featuring an enhancement mode channel, it provides ultra-low gate charge of 110 nC which facilitates efficient switching and reduced power loss. The MOSFET has a low on-resistance of 5 milliohms, ensuring minimal conduction losses during high current flow. It can dissipate power up to 300 W, making it suitable for demanding power management and conversion circuits.
The device operates over a wide temperature range from -55°C to 175°C, and meets the stringent automotive standard AEC-Q101, demonstrating robustness for automotive and industrial applications. With typical gate-source voltages ranging from -20 to +20 V and a forward voltage drop of 1.3 V, this MOSFET ensures reliable performance in high-speed switching environments.
The physical dimensions of the device are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height, allowing for convenient PCB layout designs. Supports surface mount assembly with TO-263 package type. Features enhancement mode channel for efficient switching.
Maximum drain-source resistance of 5 milliohms ensures low conduction losses. Handles a maximum power dissipation of 300 watts under operation. Operates reliably between temperatures of -55°C to 175°C. Typical gate charge of 110 nanocoulombs for fast switching performance.
Complies with automotive standard AEC-Q101 for automotive applications. Physical dimensions are 10.4 mm length, 9.35 mm width, and 4.6 mm height. Gate-source voltage range from -20 V to +20 V with a forward voltage of 1.3 V.
This MOSFET is applicable in various industrial, automotive, and consumer power electronics circuits requiring high efficiency and power density. Its compliance with automotive specs makes it suitable for vehicle powertrain and control systems. For high reliability switching in power inverters, motor controllers, or DC-DC converters, the STB100NF04T4 provides an optimal solution.
Explore our extensive collection of high-quality discrete semiconductors in the MOSFET category to find complementary devices for your designs at EnvMart.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent