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Taiwan Semiconductor Silicon Junction Switching Diode, Series Configuration, 200mA Forward Current, 225mW Power BAV99 RF

Category Semiconductor Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Brand Taiwan Semiconductor
Height 1.1mm
Length 3.05mm
Model BAV99 RF
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Power Dissipation Pd 225mW
Diode Configuration Series
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 70mV

Key Features

  • The diode features a 3-pin SOT-23 package suitable for compact electronic circuits.
  • It supports a maximum power dissipation of 225mW with fast switching characteristics.
  • The device operates reliably within a temperature range of -55°C to 150°C.
  • The peak non-repetitive forward surge current capability is 2A, enhancing transient tolerance.
  • It exhibits a maximum forward voltage of 1.25V and a peak reverse recovery time of 6ns.
  • The diode is designed for use in discrete semiconductor switching applications.
  • No automotive standards compliance or special certifications are applicable.

Product Description

Taiwan Semiconductor BAV99 RF Silicon Junction Switching Diode is a high-performance discrete semiconductor designed for efficient signal switching in electronics, power, and communication applications. This device comes in a compact SOT-23 surface mount package with 3 pins, enabling easy integration into modern circuit boards.

The diode configuration provides a series setup with a maximum forward current rating of 200mA and a maximum peak repetitive reverse voltage of 70mV, making it suitable for low-current switching applications. Its maximum power dissipation is 225mW, ensuring effective thermal management under typical operating conditions.

Operating temperature ranges from -55°C to 150°C, supporting robust performance in varying environmental conditions. The device’s peak non-repetitive forward surge current is 2A, providing transient handling capability for pulse or surge events.

Additionally, the diode demonstrates a maximum forward voltage of 1.25V and a rapid peak reverse recovery time of 6ns, contributing to minimized switching losses in high-speed circuits.

This diode is commonly used in industrial, electronic components manufacturing, and laboratory experimental setups where efficient switching and signal integrity are critical. It is not certified for automotive use and does not carry specific standards or approvals beyond general semiconductor specifications.

The diode features a 3-pin SOT-23 package suitable for compact electronic circuits. It supports a maximum power dissipation of 225mW with fast switching characteristics. The device operates reliably within a temperature range of -55°C to 150°C.

The peak non-repetitive forward surge current capability is 2A, enhancing transient tolerance. It exhibits a maximum forward voltage of 1.25V and a peak reverse recovery time of 6ns. The diode is designed for use in discrete semiconductor switching applications.

No automotive standards compliance or special certifications are applicable.

Choose Taiwan Semiconductor products for reliable semiconductor switching diodes engineered for modern electronics and power management solutions. Explore the Semiconductor and Discrete Semiconductor categories at EnvMart for a broad range of compatible components and accessories.

Explore more products in our Semiconductor Diode category.

Taiwan Semiconductor Silicon Junction Switching Diode, Series Configuration, 200mA Forward Current, 225mW Power BAV99 RF
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Frequently Asked Questions

The maximum forward current rating for this diode is 200mA.

This model has a peak non-repetitive forward surge current capability of 2A.

It operates reliably within a temperature range of -55°C to 150°C.

The maximum power dissipation for this diode is 225mW.

The diode comes in a compact SOT-23 surface mount package.

The dimensions of this model are 3.05mm in length, 1.4mm in width, and 1.1mm in height.

The maximum forward voltage for the BAV99 RF is 1.25V.

The peak reverse recovery time is 6ns.

This model uses a series diode configuration.

No, this diode is not certified for automotive use and does not carry specific automotive standards or approvals.

It is commonly used in industrial, electronic components manufacturing, and laboratory experimental setups for efficient signal switching.

The maximum peak reverse repetitive voltage for the BAV99 RF is 70mV.

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