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STMicroelectronics NPN Power Transistor 3 A, 30 V, Through Hole, 3-Pin SOT-32 2SD882

Category Power Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 27.5mm
Length 7.8mm
Model 2SD882
Width 2.9mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type SOT-32
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 12.5W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum DC collector current of 3 amperes.
  • Maximum collector-emitter voltage rating is 30 volts.
  • Designed with a maximum power dissipation of 12.5 watts.
  • Wide operating temperature range from 0°C to 150°C for reliability.
  • Single NPN transistor with a minimum gain (hFE) of 30 for efficient amplification.
  • Maximum transition frequency rated at 100 MHz for high-speed switching applications.
  • Durable 3-pin SOT-32 through-hole package suitable for mounting on standard PCBs.
  • Designed without automotive compliance but suitable for varied discrete semiconductor applications.

Product Description

STMicroelectronics 2SD882 is an NPN power transistor designed to handle up to 3 amperes of maximum collector current and a collector-emitter voltage of 30 volts. Packaged in a 3-pin SOT-32 through-hole format, it is optimized for integration into power amplification and switching circuits.

This transistor features robust performance characteristics with a maximum power dissipation of 12.5 watts and an operating temperature range from 0°C to 150°C, ensuring dependable operation under varied environmental conditions. It offers a minimum DC current gain (hFE) of 30 and a transition frequency up to 100 MHz, making it suitable for medium frequency switching and amplification tasks.

The device supports a maximum collector-base voltage of 60 volts and an emitter-base voltage maximum of 5 volts. The compact physical dimensions with a height of 27.5 mm, length of 7.8 mm, and width of 2.9 mm facilitate space-efficient PCB layouts in industrial and commercial electronic assemblies.

Commonly used in discrete semiconductor assemblies for power control, switching regulators, and signal amplification, the 2SD882 transistor from STMicroelectronics is built to meet standard electronic component requirements without automotive specific certifications, extending its usability to a broad range of industrial applications.

Key features include a single NPN transistor configuration in a through-hole mount style for ease of soldering and integration into legacy and modern circuit designs. Its electrical and mechanical specifications make it a versatile choice for engineers in electronics manufacturing, prototyping, and repair.

Supports a maximum DC collector current of 3 amperes. Maximum collector-emitter voltage rating is 30 volts. Designed with a maximum power dissipation of 12.5 watts. Wide operating temperature range from 0°C to 150°C for reliability.

Single NPN transistor with a minimum gain (hFE) of 30 for efficient amplification. Maximum transition frequency rated at 100 MHz for high-speed switching applications. Durable 3-pin SOT-32 through-hole package suitable for mounting on standard PCBs.

Designed without automotive compliance but suitable for varied discrete semiconductor applications. Compact dimensions of 27.5 mm height, 7.8 mm length, and 2.9 mm width provide space-saving design. Rated for a maximum collector-base voltage of 60 V and emitter-base voltage of 5 V.

This STMicroelectronics 2SD882 NPN power transistor is ideal for industrial, laboratory, and manufacturing electronics projects requiring reliable power switching and amplification. It fits well into semiconductor device inventories and is supported by extensive technical documentation and design tools.

Explore more Power Transistors and related semiconductor components on EnvMart for your electronic design needs.

STMicroelectronics NPN Power Transistor 3 A, 30 V, Through Hole, 3-Pin SOT-32 2SD882
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Frequently Asked Questions

The maximum DC collector current for the 2SD882 is 3 amperes.

The maximum collector-emitter voltage rating for this model is 30 volts.

It is designed with a maximum power dissipation of 12.5 watts.

The operating temperature range is from 0°C to 150°C.

The minimum DC current gain (hFE) for the 2SD882 is 30.

The maximum transition frequency rated for this model is 100 MHz.

The dimensions are 27.5 mm in height, 7.8 mm in length, and 2.9 mm in width.

This transistor comes in a durable 3-pin SOT-32 through-hole package.

The maximum collector-base voltage (VCBO) is 60 volts.

The maximum emitter-base voltage (VEBO) is 5 volts.

This transistor is suitable for power control, switching regulators, and signal amplification in various discrete semiconductor applications.

The 2SD882 features a single NPN transistor configuration.

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