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onsemi PowerTrench N-Channel MOSFET 5 A 150 V Enhancement, 3-Pin TO-220 FDP2552

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin Malaysia
Brand onsemi
Height 9.4mm
Length 10.67mm
Model FDP2552
Width 4.83mm
Mount Type Through Hole
Series PowerTrench
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 5A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 36mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 39nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.25V

Key Features

  • This MOSFET features an enhancement mode channel type for effective switching.
  • The device supports a maximum continuous drain current of 5 A for robust performance.
  • Maximum drain-source voltage of 150 V allows use in high voltage circuits.
  • Mount type is through hole, suitable for various PCB applications.
  • Low maximum drain-source resistance of 36mΩ ensures efficient conduction.
  • Designed for maximum power dissipation of 150 W, suitable for power handling.
  • Operating temperature ranges from -55°C to 175°C for reliable use in harsh environments.
  • Pin count of 3 in TO-220 package supports easy integration.

Product Description

onsemi FDP2552 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor designed for power switching and amplification in industrial, electronic, automotive, and manufacturing applications. It features a robust 3-pin TO-220 package that supports through-hole mounting for ease of installation on printed circuit boards.

This device supports a maximum continuous drain current of 5 A and a maximum drain-source voltage of 150 V, making it suitable for medium power applications requiring reliable switching and low conduction losses. Its maximum drain-source resistance of 36 milliohms ensures efficient conduction, minimizing power dissipation during operation. The MOSFET channel operates in enhancement mode, providing effective gating control.

The MOSFET can dissipate up to 150 W of power and is rated for operation within an extended temperature range of -55°C to 175°C, enabling use in harsh industrial environments or automotive electronic systems where thermal robustness is critical. The typical gate charge of 39 nC facilitates fast switching and gate-drive efficiency, while the forward voltage drop of 1.25 V enables optimized power conversion.

Its compact dimensions (length 10.67 mm, width 4.83 mm, height 9.4 mm) make it adaptable to compact circuit board layouts. Manufactured in Malaysia, this onsemi MOSFET conforms to strict quality standards although it does not carry specific certification approvals.

This MOSFET is ideal for applications including power supplies, motor drivers, industrial automation, and electronic switching circuits. The rugged TO-220 package and wide operating temperature range support usage in automotive, laboratory, manufacturing, and commercial electronics.

The product combines a fair balance of voltage, current, and power ratings for versatile usage across multiple sectors. Low gate charge and resistance enable energy-efficient performance in switching frequency applications.

Note that this MOSFET does not have automotive standard certification or other specific standards but is engineered for reliability and performance.

Explore the onsemi range of Discrete Semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart for professional industrial, automotive, and manufacturing solutions.

onsemi PowerTrench N-Channel MOSFET 5 A 150 V Enhancement, 3-Pin TO-220 FDP2552
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Frequently Asked Questions

The maximum continuous drain current for the FDP2552 MOSFET is 5 A.

This model supports a maximum drain-source voltage of 150 V.

The operating temperature range for this MOSFET is from -55°C to 175°C.

It can dissipate up to 150 W of power.

The maximum drain-source resistance is 36 milliohms (36 mΩ).

The FDP2552 uses a TO-220 package type, suitable for through-hole mounting.

The typical gate charge is 39 nC.

The forward voltage drop is 1.25 V.

This model has a pin count of 3.

The channel type for this MOSFET is N-channel.

This MOSFET is suitable for applications including power supplies, motor drivers, industrial automation, and electronic switching circuits.

The FDP2552 is manufactured in Malaysia.

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