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onsemi High Voltage NPN Bipolar Transistor, 300 mA, 400 V, 3-Pin TO-92 KSP44TA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.3mm
Model KSP44TA
Width 4.19mm
Mount Type Through Hole
Series KSP44
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 500V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 300mA
Transistor Configuration Single

Key Features

  • This transistor package is TO-92 with 3 pins for through-hole mounting.
  • Maximum DC collector current is 300 mA ensuring suitable power handling.
  • Maximum collector-emitter voltage rating is 400 V for high voltage applications.
  • Maximum power dissipation is 625 mW enabling efficient thermal management.
  • Operating temperature ranges from -55°C to 150°C for industrial environments.
  • Minimum DC current gain (hFE) is 40 providing reliable amplification.
  • Maximum collector-base voltage is rated at 500 V for robust performance.
  • Suitable for use in industrial, electronic, power, and semiconductor applications.

Product Description

onsemi KSP44TA is a high voltage NPN bipolar junction transistor (BJT) with a 3-pin TO-92 package. It supports a maximum DC collector current of 300 mA and a collector-emitter voltage of 400 V, making it suitable for various high voltage and power switching applications.

The transistor features a maximum power dissipation rating of 625 mW and operates reliably across a wide temperature range from -55°C to 150°C, providing dependable performance in demanding industrial and electronic environments.

This component utilizes through-hole mount technology and is configured as a single transistor with NPN polarity. The transistor's minimum current gain of 40 (hFE) ensures effective amplification for a broad range of electronic circuit designs.

The compact TO-92 package with dimensions approximately 20.95 mm height, 5.3 mm length, and 4.19 mm width contributes to its ease of integration and thermal efficiency. With a maximum emitter-base voltage of 6 V and collector-base voltage of 500 V, this device is engineered for robust operation in power control, switching, and amplification roles.

Typical industry applications include electronic components for power supplies, industrial control systems, and semiconductor devices requiring reliable high voltage NPN transistors. The product is compliant with standard industrial specifications and is ideal for use in harsh operating conditions.

This transistor package is TO-92 with 3 pins for through-hole mounting. Maximum DC collector current is 300 mA ensuring suitable power handling. Maximum collector-emitter voltage rating is 400 V for high voltage applications.

Maximum power dissipation is 625 mW enabling efficient thermal management. Operating temperature ranges from -55°C to 150°C for industrial environments. Minimum DC current gain (hFE) is 40 providing reliable amplification.

Maximum collector-base voltage is rated at 500 V for robust performance. Suitable for use in industrial, electronic, power, and semiconductor applications. Explore more on high performance bipolars and semiconductors in the Electronics & Electricals category at EnvMart for industrial and professional use.

Explore more products in our Bipolar Transistors category.

onsemi High Voltage NPN Bipolar Transistor, 300 mA, 400 V, 3-Pin TO-92 KSP44TA
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Frequently Asked Questions

The maximum collector-emitter voltage rating is 400 V, making it suitable for high voltage applications.

This model supports a maximum DC collector current of 300 mA, ensuring suitable power handling.

The maximum power dissipation is rated at 625 mW, enabling efficient thermal management during operation.

It operates reliably across a temperature range from -55°C to 150°C, suitable for industrial environments.

The dimensions of the TO-92 package are approximately 20.95 mm in height, 5.3 mm in length, and 4.19 mm in width.

The minimum DC current gain (hFE) is 40, providing reliable amplification for various electronic applications.

This model utilizes through-hole mounting technology, making it easy to integrate into various circuits.

The maximum collector-base voltage is rated at 500 V, ensuring robust performance in power control applications.

It is configured as a single NPN transistor, suitable for various electronic circuit designs.

It is suitable for use in industrial, electronic, power, and semiconductor applications, particularly in power switching and amplification roles.

The maximum emitter-base voltage (VEBO) is rated at 6 V, providing additional operational reliability.

The country of origin for this transistor is India.

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