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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN302P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
onsemi FDN302P is a PowerTrench® Type P-Channel MOSFET transistor designed with a 3-pin SOT-23 surface mount package. It supports a maximum continuous drain current of 2.4 A and a maximum drain-source voltage of 20 V, ideally suited for efficient and compact power management applications.
The MOSFET features an enhancement mode channel with a low typical gate charge of 9 nC, enabling fast switching speeds and reducing power losses in synchronous rectification applications. The device's soft body diode characteristic minimizes switching noise and eliminates the need for complex snubber circuits.
The compact dimensions of the SOT-23 package - 2.92 mm length, 1.4 mm width, and 940 μm height - make it suitable for dense PCB layouts in industrial and consumer electronics. Operating temperatures range from -55°C to 150°C, ensuring reliability across diverse environments.
PowerTrench technology employed by onsemi ensures improved system efficiency and higher power density, making the FDN302P MOSFET suitable for automotive electronics, industrial controls, and general power switching applications.
Compact 3-pin SOT-23 surface mount package facilitates small footprint design. Low gate charge supports efficient, high-frequency switching. Handles 2.4 amp drain current with low Rds(on) of 55 milliohms for reduced conduction losses.
Wide operating temperature range provides robustness for rugged applications. Soft body diode eliminates the need for additional snubber components, simplifying circuitry. Power dissipation limit of 500 mW fits thermal management constraints in compact devices.
Typical forward voltage of -1.2 V enhances switching performance. Maximum gate-source voltage of ±12 V protects device under transient conditions. Length, width, and height optimized for dense electronic assemblies. Perfect choice for replacing higher voltage MOSFETs while maintaining efficiency.
This MOSFET is ideal for industrial, automotive, consumer electronics, and power management applications where efficiency, reliability, and compactness are critical criteria. Explore similar high-quality MOSFET options and semiconductor devices in the Electronics & Electricals category at EnvMart.
Explore more products in our Discrete Semiconductor category.
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