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onsemi PowerTrench Type P-Channel MOSFET, 3-Pin SOT-23, 2.4 A, 20 V Enhancement FDN302P

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 940μm
Length 2.92mm
Model FDN302P
Width 1.4mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 2.4A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 55mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 9nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf -1.2V

Key Features

  • Designed with PowerTrench technology for enhanced efficiency and power density.
  • Features low gate charge for fast switching applications.
  • Has a maximum drain-source resistance of 55 milliohms.
  • Supports enhancement mode and surface mount for versatile PCB integration.
  • Operates in temperature range from -55°C to 150°C for rugged use.
  • Typical gate charge is 9 nanocoulombs ensuring low power loss.
  • Maximum power dissipation of 500 milliwatts allows for compact designs.
  • Built with soft body diode to reduce switching losses and enhance reliability.

Product Description

onsemi FDN302P is a PowerTrench® Type P-Channel MOSFET transistor designed with a 3-pin SOT-23 surface mount package. It supports a maximum continuous drain current of 2.4 A and a maximum drain-source voltage of 20 V, ideally suited for efficient and compact power management applications.

The MOSFET features an enhancement mode channel with a low typical gate charge of 9 nC, enabling fast switching speeds and reducing power losses in synchronous rectification applications. The device's soft body diode characteristic minimizes switching noise and eliminates the need for complex snubber circuits.

The compact dimensions of the SOT-23 package - 2.92 mm length, 1.4 mm width, and 940 μm height - make it suitable for dense PCB layouts in industrial and consumer electronics. Operating temperatures range from -55°C to 150°C, ensuring reliability across diverse environments.

PowerTrench technology employed by onsemi ensures improved system efficiency and higher power density, making the FDN302P MOSFET suitable for automotive electronics, industrial controls, and general power switching applications.

Compact 3-pin SOT-23 surface mount package facilitates small footprint design. Low gate charge supports efficient, high-frequency switching. Handles 2.4 amp drain current with low Rds(on) of 55 milliohms for reduced conduction losses.

Wide operating temperature range provides robustness for rugged applications. Soft body diode eliminates the need for additional snubber components, simplifying circuitry. Power dissipation limit of 500 mW fits thermal management constraints in compact devices.

Typical forward voltage of -1.2 V enhances switching performance. Maximum gate-source voltage of ±12 V protects device under transient conditions. Length, width, and height optimized for dense electronic assemblies. Perfect choice for replacing higher voltage MOSFETs while maintaining efficiency.

This MOSFET is ideal for industrial, automotive, consumer electronics, and power management applications where efficiency, reliability, and compactness are critical criteria. Explore similar high-quality MOSFET options and semiconductor devices in the Electronics & Electricals category at EnvMart.

Explore more products in our Discrete Semiconductor category.

onsemi PowerTrench Type P-Channel MOSFET, 3-Pin SOT-23, 2.4 A, 20 V Enhancement FDN302P
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.4 A.

It supports a maximum drain-source voltage of 20 V.

The typical gate charge is 9 nanocoulombs (nC).

The dimensions of the SOT-23 package are 2.92 mm in length, 1.4 mm in width, and 940 μm in height.

The maximum power dissipation is 500 milliwatts (mW).

It operates within a temperature range from -55°C to 150°C.

This model uses an enhancement mode channel type.

The maximum gate-source voltage is ±12 V.

The maximum drain-source resistance is 55 milliohms (mΩ).

It is suitable for automotive electronics, industrial controls, and general power switching applications.

Yes, it features a soft body diode that minimizes switching noise and enhances reliability.

This model is designed for surface mount applications.

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