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onsemi PowerTrench Type P-Channel MOSFET, 2.4 A, 20 V Enhancement, 3-Pin SOT-23 FDN304PZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN304PZ |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- PowerTrench MOSFET provides enhanced switching efficiency and power density for electronic circuits.
- The device features a low maximum drain-source resistance of 52 milliohms enhancing power efficiency.
- Typical gate charge is low at 12 nanocoulombs, enabling fast switching performance.
- It supports a maximum power dissipation of 500 milliwatts, suitable for compact applications.
- Operating temperature ranges from -55°C to +150°C ensuring reliability under various conditions.
- The MOSFET has a height of 940 micrometers, length of 2.92 millimeters, and width of 1.4 millimeters suitable for surface mount applications.
- Maximum gate-source voltage ranges between -8 V and +8 V, appropriate for enhancement mode operation.
- Forward voltage of the body diode is -1.2 volts aiding in synchronous rectification efficiency.
Product Description
onsemi FDN304PZ PowerTrench Type P-Channel MOSFET is a discrete semiconductor designed for efficient power switching applications. It comes in a compact 3-pin SOT-23 surface mount package, optimized for use in low-voltage circuits requiring 20 V maximum drain-source voltage and 2.4 A continuous drain current.
The PowerTrench MOSFET technology features a shielded-gate design offering a low figure of merit. This results in reduced power loss through low drain-source resistance and minimal gate charge, enabling improved system efficiency and power density.
This enhancement mode MOSFET operates reliably across a wide temperature range from -55°C to +150°C, suitable for industrial and commercial electronic equipment. Its soft reverse recovery body diode enhances switching speed and reduces electromagnetic interference, allowing replacement of higher voltage MOSFETs and snubber circuits.
Due to its small size dimensions - length 2.92 mm, width 1.4 mm, and height 940 µm - this device is ideal for compact PCB layouts in consumer electronics, power management modules, and synchronous rectifiers in AC/DC power supplies.
Key specifications include a maximum gate-source voltage of ±8 V, maximum power dissipation of 500 mW, and a typical gate charge of 12 nC, which collectively support fast switching and efficient power control.
Applications include industrial power control, automotive electronics, consumer devices, and general-purpose switching in power management circuits. PowerTrench technology provides low Rds(on) and fast switching. Allows system efficiency improvements in power supplies.
Enhanced body diode reduces system complexity. Compact SOT-23 package for surface mounting. Wide operating temperature suitability for industrial use. Supports synchronous rectification applications. Low typical gate charge enables high-frequency operation.
Explore a broad range of semiconductor devices in the EnvMart catalog to find complementary components for your industrial, laboratory, or commercial power electronics projects.
Explore more products in our Semiconductors category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.4 A.
This P-Channel MOSFET has a maximum drain-source voltage rating of 20 V.
The dimensions of this model are 2.92 mm in length, 1.4 mm in width, and 940 μm in height.
The typical gate charge for the FDN304PZ is 12 nanocoulombs (nC).
This model supports a maximum power dissipation of 500 milliwatts (mW).
The operating temperature range for this MOSFET is from -55°C to +150°C.
The maximum gate-source voltage for the FDN304PZ ranges between -8 V and +8 V.
This MOSFET comes in a 3-pin SOT-23 surface mount package type.
The maximum drain-source resistance for the FDN304PZ is 52 milliohms (mΩ).
This model is suitable for applications in industrial power control, automotive electronics, consumer devices, and general-purpose switching in power management circuits.
The forward voltage of the body diode is -1.2 volts.
This model features a Type P channel configuration.
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