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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Model | ZTX790ASTZ |
| Mount Type | Through Hole |
| Series | ZTX7X |
| Maximum Operating Temperature | 200°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -40V |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
DiodesZetex ZTX790ASTZ is a high-performance PNP Bipolar Junction Transistor (BJT) designed for a wide range of electronic and industrial applications. The device supports a maximum DC collector current of -2 amperes and withstands a maximum collector emitter voltage of -40 volts, making it suitable for moderate power switching and amplification tasks.
This transistor is packaged in a 3-pin E-Line configuration, optimized for through-hole mounting on printed circuit boards. The design enables easy integration into various circuits, including power supplies, amplifiers, and general electronics.
The minimum DC current gain (hFE) of 150 ensures strong signal amplification capacity, while the maximum transition frequency (ft) of 100 MHz allows it to operate efficiently in high-frequency circuits. It can reliably operate within an extended temperature range from -55°C up to 200°C, supporting robust performance in harsh environments.
The transistor's maximum power dissipation is rated at 1 watt, balancing power handling with compact packaging. The electrical characteristics include a collector base voltage maximum of 50 V and an emitter base voltage maximum of 5 V, ensuring versatility in different circuit designs.
These attributes make the ZTX790ASTZ transistor an ideal choice for industrial electronics, communication devices, power control modules, HVAC systems, and other applications requiring dependable bipolar transistor components.
This transistor operates with a maximum power dissipation of 1 watt. It has a minimum DC current gain (hFE) of 150 for efficient amplification. The maximum transition frequency is 100 MHz, suitable for high-frequency applications.
It is designed to function within a temperature range from -55°C to +200°C. The transistor configuration is single, with a PNP polarity. It includes maximum collector base voltage of 50 V and maximum emitter base voltage of 5 V.
The package type is E-Line, enhancing compatibility with through-hole PCB layouts. Ideal for general purpose electronic applications requiring reliable PNP transistor performance. Browse the Electronics & Electricals category at EnvMart for more semiconductor components from trusted brands like DiodesZetex.
Explore more products in our Bipolar Transistors category.
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