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ams OSRAM Infrared Phototransistor Through Hole 2-Pin 5 mm (T-1 3/4) Package SFH 314 FA-2/3
Specifications
| Country of Origin | India |
|---|---|
| Brand | ams OSRAM |
| Height | 6.9mm |
| Length | 5.9mm |
| Model | SFH 314 FA-2/3 |
| Width | 5.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 100°C |
| Package Type | 5 mm (T-1 3/4) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | IEC 62471 2006, RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 14μs |
| Peak Wavelength | 870nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 80 ° |
| Collector Current | 50mA |
| Maximum Light Current | 8600μA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 70V |
| Emitter Collector Voltage | 7V |
Key Features
- The phototransistor detects infrared spectrums with a peak wavelength of 870nm.
- It offers a typical rise and fall time of 14 microseconds, enabling fast response.
- The maximum light current is 8600 microamperes with a dark current of 200 nanoamperes.
- Its angle of half sensitivity is 80 degrees for wide detection coverage.
- Collector current is rated up to 50 mA, with collector-emitter voltage of 70 V and emitter-collector voltage of 7 V.
- Operating temperature ranges from -40°C to 100°C ensuring durability in harsh environments.
- Complies with IEC 62471 2006 and RoHS standards for safety and environmental compliance.
- Ideal for use in photointerrupters, industrial electronics, and control or drive circuits.
Product Description
ams OSRAM SFH 314 FA-2/3 is a high-quality infrared phototransistor housed in a durable through-hole 2-pin 5 mm (T-1 3/4) package. This NPN silicon device provides precise infrared light detection for various industrial and electronic applications.
The device features a peak sensitivity at 870 nm wavelength with an 80 degree angle of half sensitivity, suitable for detecting infrared light in a wide spatial region. Typical rise and fall times of 14 microseconds support fast signal response.
Electrical characteristics include a maximum light current of 8600 μA and a dark current limited to 200 nA, ensuring high signal-to-noise performance. Collector current capability reaches up to 50 mA with safe voltage limits of 70 V collector-emitter and 7 V emitter-collector.
Physically compact dimensions of 5.9 mm length and width, combined with 6.9 mm height, allow easy integration in through-hole mounting PCB designs. The operational temperature range from -40°C to 100°C ensures reliable function in both harsh industrial and commercial environments.
Manufactured to comply with IEC 62471 2006 and RoHS directives, this phototransistor supports environmentally conscious product designs and safety standards.
Applications for the SFH 314 FA-2/3 include computer-controlled flashes, photointerrupters, industrial electronic sensor circuits, and control or drive circuits demanding reliable infrared detection.
The phototransistor detects infrared spectrums with a peak wavelength of 870nm. Typical rise and fall time of 14 microseconds enable fast response. Maximum light and dark currents are 8600 μA and 200 nA respectively. Angle of half sensitivity is 80 degrees for wide infrared detection.
Compact 5 mm (T-1 3/4) through-hole package facilitates easy PCB mounting. Collector current rated up to 50 mA with voltage limits for safe operation. Operating temperature from -40°C to 100°C for harsh environment endurance.
Certified to IEC 62471 2006 and RoHS standards for safety and compliance. Suitable for industrial electronics, photointerrupters, and sensor applications involving infrared detection. Explore more components and Phototransistor solutions with ams OSRAM on EnvMart for cutting-edge optical sensing technologies.
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Frequently Asked Questions
The peak wavelength for this infrared phototransistor is 870 nm.
The maximum collector current of this model is rated at 50 mA.
This phototransistor has dimensions of 5.9 mm in length, 5.9 mm in width, and 6.9 mm in height.
The operating temperature range for this infrared phototransistor is from -40°C to 100°C.
The angle of half sensitivity for this model is 80 degrees, providing wide detection coverage.
The typical rise and fall time for this infrared phototransistor is 14 microseconds.
The collector-emitter voltage is limited to 70 V, while the emitter-collector voltage is limited to 7 V.
The maximum light current is 8600 microamperes, and the maximum dark current is 200 nanoamperes.
This model uses a through-hole mounting type.
This phototransistor complies with IEC 62471 2006 and RoHS standards for safety and environmental compliance.
This model is suitable for applications such as photointerrupters, industrial electronics, and control or drive circuits.
This infrared phototransistor has 2 pins.
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