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ams OSRAM 80 ° Infrared Phototransistor, Through Hole 2-Pin 5 mm (T-1 3/4) Package SFH 314 FA-2/3
Specifications
| Country of Origin | India |
|---|---|
| Brand | ams OSRAM |
| Height | 6.9mm |
| Length | 5.9mm |
| Model | SFH 314 FA-2/3 |
| Width | 5.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 100°C |
| Package Type | 5 mm (T-1 3/4) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | IEC 62471 2006, RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 14μs |
| Peak Wavelength | 870nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 80 ° |
| Collector Current | 50mA |
| Maximum Light Current | 8600μA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 70V |
| Emitter Collector Voltage | 7V |
Key Features
- Detects infrared wavelengths with a peak wavelength at 870 nm.
- Features a wide 80° angle of half sensitivity for broad coverage.
- Offers low typical fall and rise times of 14 microseconds each.
- Supports maximum collector current of 50 mA for versatile application.
- Operates reliably in temperatures ranging from -40°C to 100°C.
- Compact 5.9 mm length, 5.9 mm width, and 6.9 mm height dimensions.
- Constructed for through-hole mounting with a clear or black plastic lens option.
- Compliant with IEC 62471 2006 and RoHS standards for safety and environmental compatibility.
Product Description
ams OSRAM SFH 314 FA-2/3 is a silicon NPN infrared phototransistor housed in a compact 5 mm (T-1 3/4) through-hole 2-pin package. Designed to detect infrared light with a peak wavelength of 870 nm, it provides efficient photodetection with typical rise and fall times of 14 microseconds.
This phototransistor can handle a maximum collector current of 50 mA and features a wide angle of half sensitivity at 80°, enabling it to detect light over a broad area. It operates within a wide temperature range from -40°C up to 100°C, making it suitable for harsh industrial environments.
The 5.9 mm length and width, along with a height of 6.9 mm, contribute to its compact size, ideal for through-hole mounting on printed circuit boards. This device includes clear or black plastic lenses, with diffused lenses used as daylight filters enhancing its versatility.
It complies with IEC 62471 2006 and RoHS standards, ensuring safety and environmental adherence. Typical applications include use in computer-controlled flashes, photointerrupters, and industrial electronic controls and drive circuits.
Detects infrared wavelengths with peak wavelength at 870 nm. Offers a 50 mA maximum collector current. Operates between -40°C to 100°C ambient temperatures. Mounts through-hole with 5 mm (T-1 3/4) package size. Compliant with IEC 62471 and RoHS standards.
Wide 80 ° half sensitivity angle for broad detection. Typical rise and fall times of 14 microseconds each. Compact dimensions suitable for PCB integration.
The ams OSRAM Phototransistor is well suited for industrial, electronic, and automation applications demanding reliable infrared sensing. EnvMart offers this product for specialized electronics component needs.
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Frequently Asked Questions
The peak wavelength of this infrared phototransistor is 870 nm.
This model supports a maximum collector current of 50 mA.
The dimensions are 5.9 mm in length, 5.9 mm in width, and 6.9 mm in height.
It features a wide angle of half sensitivity of 80° for broad coverage.
The typical rise and fall times are both 14 microseconds.
It operates reliably in temperatures ranging from -40°C to 100°C.
This model is designed for through-hole mounting.
It complies with IEC 62471 2006 and RoHS standards.
The maximum collector-emitter voltage is 70V.
Typical applications include use in computer-controlled flashes, photointerrupters, and industrial electronic controls.
It includes options for clear or black plastic lenses, with diffused lenses used as daylight filters.
This phototransistor has 2 pins.
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