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| Country of Origin | India |
|---|---|
| Diameter | 5.1mm |
| Brand | ams OSRAM |
| Height | 9mm |
| Length | 5.9mm |
| Model | SFH 300 FA-3/4 |
| Width | 5.9mm |
| Mount Type | Through Hole |
| Series | SFH 300 FA |
| Maximum Operating Temperature | 100°C |
| Package Type | 5 mm (T-1 3/4) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 10μs |
| Peak Wavelength | 880nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 50 ° |
| Collector Current | 50mA |
| Maximum Light Current | 7700μA |
| Maximum Dark Current | 50nA |
| Collector Emitter Voltage | 35V |
| Emitter Collector Voltage | 7V |
ams OSRAM SFH 300 FA-3/4 is a high-performance infrared phototransistor housed in a 5 mm (T-1 3/4) through-hole 2-pin package. It is optimized for detecting infrared light with a peak wavelength of 880 nm, making it ideal for numerous electronic applications including photointerrupters, computer-controlled flashes, industrial electronics, and drive/control circuits.
This phototransistor features a swift typical rise and fall time of 10 microseconds, allowing rapid response to light signals. It supports a maximum collector current of 50 mA and a light current of 7700 μA, enabling effective signal amplification in electronic circuits. The angle of half sensitivity is 50 degrees, providing a balanced field of detection.
Designed to operate reliably within a temperature range of -40°C to 100°C, this device is suitable for harsh industrial environments. Its low dark current of 50 nA minimizes noise interference, enhancing detection accuracy. The through-hole mounting and compact 5 mm package allow for easy integration into printed circuit boards.
Constructed from NPN silicon, the SFH 300 FA-3/4 series are available with clear or black plastic lenses to suit different application needs. The product complies with RoHS standards, confirming its environmental and health safety.
This phototransistor detects infrared light with a peak wavelength of 880 nm. Typical rise and fall times of 10 microseconds ensure fast signal response. Maximum collector current of 50 mA for efficient current handling.
Wide operating temperature range from -40°C to 100°C for diverse environments. Through hole 2-pin mounting in a 5 mm (T-1 3/4) package. Low dark current of 50 nA for minimal noise. Angle of half sensitivity of 50 degrees.
Compliant with RoHS environmental standards.
This infrared phototransistor is widely applicable in industrial, electronic components, and optoelectronics fields, providing reliable performance in optical sensing and switching applications. It is suitable for use in manufacturing, automation, and instrumentation projects.
Explore more electronic components and Phototransistors in the EnvMart collection for advanced industrial and laboratory needs.
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