onsemi Silicon Junction Diode Single 1 A 1 kV 2-Pin DO-41 MUR1100ERLG

onsemi MUR1100ERLG Silicon Junction Diode is a high-performance discrete semiconductor designed for switching and rectification uses in electronic circuits. It provides reliable 1 ampere forward current capacity and a peak repetitive reverse voltage of 1 kV, making it suitable for a range of industrial and commercial electronic applications.

This diode features a DO-41 through-hole package type with two pins, ensuring easy mounting on printed circuit boards. The device supports a peak non-repetitive forward surge current of 35A, which ensures robust performance during transient conditions. It operates effectively across a broad temperature spectrum from -65°C to 175°C, allowing reliable functionality in harsh environments.

One key operational advantage is its fast peak reverse recovery time of 100 ns, which minimizes switching losses and enhances efficiency in power electronics and switching regulator circuits. The maximum forward voltage drop of 1.75 V helps maintain power efficiency during conduction.

The physical dimensions of approximately 5.2 mm length and 2.7 mm diameter enable compact circuit design without compromising performance. This diode does not carry specific automotive standards but finds versatile use in industrial electronics, power supplies, and consumer devices requiring stable diode performance.

Common applications include electrical power conversion, rectification in power supplies, electronic switching and pulse circuits, and other semiconductor applications requiring durable and efficient diode components. Its silicon junction construction ensures high reliability and consistency in electrical characteristics over the device's lifetime.

This diode supports a maximum forward current of 1 ampere. The peak reverse repetitive voltage capacity is rated at 1000 volts. Features a through-hole mount type with a standard DO-41 package. Capable of withstanding a peak non-repetitive forward surge current of 35 amperes.

Operates within a wide temperature range from -65°C to 175°C. Fast peak reverse recovery time of 100 nanoseconds for efficient switching. Small form factor with dimensions approximately 5.2 mm in length and 2.7 mm in diameter.

Maximum forward voltage drop is 1.75 volts under operating conditions. Equipped with 2 pins for easy integration into through-hole circuit boards. Explore a wide range of semiconductors and switching diode components in the Electronics & Electricals category at EnvMart for your industrial and laboratory projects.

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