onsemi Silicon Junction Switching Diode 1 A 1 kV DO-41 Through Hole MUR1100ERLG

onsemi MUR1100ERLG is a silicon junction switching diode engineered for demanding power and industrial applications. It provides a maximum forward current of 1 A and a high peak reverse repetitive voltage of 1 kV, ensuring reliable operation in power rectification and switching circuits.

The diode comes in a DO-41 through-hole package, measuring 5.2 mm in length and 2.7 mm in diameter, suitable for conventional PCB assembly methods. It has a peak reverse recovery time of 100 ns, enabling swift transition between on and off states that is essential for switching diode applications in power supplies and motor controls.

Designed to withstand harsh environments, it operates reliably from a minimum temperature of -65˚C up to a maximum of 175˚C. The device also supports a peak non-repetitive forward surge current of 35 A, allowing it to endure short transient currents without damage.

This diode finds extensive use in industrial, manufacturing, and electrical power systems requiring dependable switching and rectification. Its robust construction and standardized package facilitate integration into a wide range of electronic circuits and assemblies.

Maximum peak reverse repetitive voltage: 1 kV. Maximum forward current: 1 A. Peak non-repetitive forward surge current: 35 A. Peak reverse recovery time: 100 ns. Operating temperature range: -65˚C to 175˚C. Package type: DO-41, through hole.

Compact physical dimensions: 5.2 mm length, 2.7 mm diameter. Single silicon junction diode configuration with 2 pins. Explore the extensive range of semiconductor Switching Diodes at EnvMart for industrial and power electronics needs.