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onsemi Bipolar Transistor 500 mA NPN 45 V 3-Pin SOT-23 BC817-25LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC817-25LT1G
Width 2.64mm
Mount Type Surface
Series BC817-25L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia Transistor, 500 mA NPN, 45 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • Designed for linear and switching general purpose applications.
  • Features a maximum DC collector current of 500 mA.
  • Maximum collector-emitter voltage rating of 45 V.
  • Surface mount SOT-23 package ideal for low power usage.
  • NPN transistor configuration with a minimum DC current gain (hFE) of 40.
  • Maximum power dissipation rating is 300 mW.
  • Operating temperature range from -65°C to 150°C.
  • Maximum transition frequency of 100 MHz.

Product Description

onsemi BC817-25LT1G is a high-reliability NPN bipolar transistor designed for general purpose linear and switching applications. It supports a maximum DC collector current of 500 mA and withstands collector-emitter voltages up to 45 V, providing robust performance in low-power electronic circuits.

This transistor is housed in a compact 3-pin SOT-23 surface mount package, making it ideal for space-limited and automated PCB assembly environments. Its design ensures efficient handling of power dissipation up to 300 mW, suitable for signal amplification and switching tasks.

Key technical attributes include a minimum DC current gain (hFE) of 40 ensuring adequate amplification capability, a maximum transition frequency (ft) of 100 MHz for rapid switching, and operating temperature tolerance ranging from -65°C to 150°C for reliability across varied environmental conditions.

The BC817-25LT1G transistor meets the automotive AEC-Q101 standard, highlighting its suitability for use in automotive electronics and other demanding industrial applications requiring stringent quality and durability.

Typical applications include electronic circuit protection such as ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic circuitry. Its compatibility with typical signal and power requirements make it a versatile component for electronics manufacturing, industrial control, automotive electronics, and electronic prototyping labs.

Designed for linear and switching general purpose applications. Maximum DC collector current of 500 mA. Maximum collector-emitter voltage up to 45 V. Compact 3-pin SOT-23 surface mount package. NPN configuration with minimum DC current gain of 40.

Operating temperature range from -65°C to 150°C. Maximum power dissipation of 300 mW. Meets automotive AEC-Q101 qualification standard. Suitable for a broad range of industrial and automotive electronics applications. Set includes one transistor device.

Explore our extensive range of semiconductors and Bipolar Transistors for industrial, automotive, and laboratory electronic applications on EnvMart.

onsemi Bipolar Transistor 500 mA NPN 45 V 3-Pin SOT-23 BC817-25LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

The maximum collector-emitter voltage rating is 45 V.

The operating temperature range is from -65°C to 150°C.

The minimum DC current gain (hFE) is 40.

The maximum power dissipation rating for this model is 300 mW.

It uses a compact 3-pin SOT-23 surface mount package.

The maximum transition frequency is 100 MHz.

Yes, it meets the automotive AEC-Q101 standard, making it suitable for automotive electronics.

The maximum emitter-base voltage (VEBO) rating is 5 V.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

It has an NPN transistor configuration.

It is commonly used for electronic circuit protection, polarity reversal protection, and inductive load protection, among others.

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