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onsemi Silicon Junction Switching Diode, Common Cathode, 200 mA, 3-Pin SOT-23 Package, 100 V BAV70LT1G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.94mm
Length 2.9mm
Model BAV70LT1G
Width 1.3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Power Dissipation Pd 225mW
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 500mA
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V
Nexperia 100 V 215 mA Diode General Purpose 3-Pin SOT-23 BAV70,215Brand Nexperia

Key Features

  • Silicon junction diode suitable for switching applications.
  • Maximum forward current rating of 200 mA.
  • Compact 3-pin SOT-23 package for surface mounting.
  • Maximum peak reverse voltage of 100 V.
  • Peak reverse recovery time of 6 ns ensures rapid switching capabilities.
  • Operating temperature range from -55°C to 150°C.
  • Maximum power dissipation rating of 225 mW.
  • Forward voltage drop up to 1.25 V at maximum current.

Product Description

onsemi BAV70LT1G is a small signal silicon junction switching diode featuring a common cathode configuration designed for surface mount applications in electronic circuits. It is housed in a compact 3-pin SOT-23 package, making it suitable for high-density PCB assembly.

This diode delivers a maximum forward current of 200 mA and withstands a peak repetitive reverse voltage of 100 V. Its low forward voltage of 1.25 V and fast peak reverse recovery time of 6 ns enable efficient switching performance essential in digital and analog circuits.

Designed to operate reliably in harsh environments, it supports an operating temperature range from -55°C to 150°C, ensuring stable function in industrial, automotive, and consumer electronics.

The small form factor, with dimensions of 2.9 mm length, 1.3 mm width, and 0.94 mm height, makes it ideal for compact electronic designs requiring robust switching diodes.

The diode supports a maximum power dissipation of 225 mW and can handle peak non-repetitive forward surge currents up to 500 mA, emphasizing its resilience in transient conditions.

This product is suited for various industrial and electronic applications including switching circuits, protection circuits, and high-speed switching tasks in instrumentation and communications equipment.

Silicon junction diode suitable for switching applications. Maximum forward current rating of 200 mA. Compact 3-pin SOT-23 package for surface mounting. Maximum peak reverse voltage of 100 V. Peak reverse recovery time of 6 ns ensures rapid switching capabilities.

Operating temperature range from -55°C to 150°C. Maximum power dissipation rating of 225 mW. Forward voltage drop up to 1.25 V at maximum current. Small physical dimensions: length 2.9 mm, width 1.3 mm, height 0.94 mm. Reliable performance with a peak non-repetitive forward surge current of 500 mA.

Explore the range of onsemi semiconductor components and Switching Diodes on EnvMart for your industrial and electronics manufacturing needs.

onsemi Silicon Junction Switching Diode, Common Cathode, 200 mA, 3-Pin SOT-23 Package, 100 V BAV70LT1G
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Frequently Asked Questions

The maximum forward current rating of the BAV70LT1G diode is 200 mA.

This silicon junction diode has a maximum peak reverse voltage of 100 V.

The BAV70LT1G diode is housed in a compact 3-pin SOT-23 package, suitable for surface mounting.

The peak reverse recovery time for this model is 6 ns, which enables rapid switching capabilities.

The operating temperature range for the BAV70LT1G diode is from -55°C to 150°C.

The dimensions of the BAV70LT1G diode are 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height.

The maximum power dissipation rating for this diode is 225 mW.

The forward voltage drop at maximum current for the BAV70LT1G is up to 1.25 V.

The peak non-repetitive forward surge current rating for this diode is 500 mA.

The BAV70LT1G diode is suitable for switching circuits, protection circuits, and high-speed switching tasks in instrumentation and communications equipment.

The BAV70LT1G features a common cathode configuration.

The country of origin for the BAV70LT1G diode is India.

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