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onsemi PNP Transistor, 1 A, 80 V, 3-Pin TO-225, 30 W Power Dissipation BD180G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 3mm
Length 27.73mm
Model BD180G
Width 7.8mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-225
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 15
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 30W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 3MHz

Key Features

  • Suitable for general purpose PNP amplification applications.
  • Maximum power dissipation of 30 W enables reliable performance under high loads.
  • Through-hole mount type with compact dimensions for easy PCB integration.
  • High voltage ratings of 80 V collector base and collector emitter voltages for robust operation.
  • Operating temperature range from -65°C to 150°C suitable for varied industrial environments.
  • Minimum DC current gain (hFE) of 15 ensures effective current amplification.
  • 3 MHz transition frequency supports moderate-frequency switching and amplification.
  • Designed for single transistor configuration in discrete semiconductor applications.

Product Description

onsemi BD180G is a general purpose PNP bipolar junction transistor designed for use in amplifier and switching applications within the electronics industry. It supports a maximum collector current of 1 A and a collector-emitter voltage threshold of 80 V, making it suitable for a wide range of power control circuits.

This transistor is housed in a 3-pin TO-225 package, facilitating easy through-hole PCB mounting. Its compact size with dimensions of approximately 27.73 mm length, 7.8 mm width, and 3 mm height allows integration into space-constrained electronic assemblies.

The BD180G features a maximum power dissipation rating of 30 W, ensuring reliable functioning under demanding thermal conditions. It operates efficiently within temperature limits of -65°C to 150°C, accommodating various industrial and commercial environments.

Its minimum DC current gain of 15 and transition frequency of 3 MHz make it effective for moderate frequency amplification tasks. The transistor polarity is PNP, with maximum voltage ratings of 80 V collector base and 5 V emitter base, ensuring stable operation.

Suitable for use in power amplification and signal processing circuits. Compatible with various electronic devices requiring medium power transistors. Robust construction for extended operational life in harsh operating conditions.

Ideal for industrial, manufacturing, and laboratory electronic applications. Compliance with standard electronic component manufacturing ensures consistency and quality. Set contains one BD180G transistor in TO-225 package. This product is new and made to applicable semiconductor quality standards.

Explore more Bipolar Transistors and power semiconductor devices in the Electronics & Electricals category on EnvMart for robust and reliable electronic components.

onsemi PNP Transistor, 1 A, 80 V, 3-Pin TO-225, 30 W Power Dissipation BD180G
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Frequently Asked Questions

The BD180G transistor supports a maximum collector current of 1 A.

It has a maximum power dissipation rating of 30 W, ensuring reliable performance under high loads.

This model has dimensions of approximately 27.73 mm in length, 7.8 mm in width, and 3 mm in height.

The transistor features a transition frequency of 3 MHz, suitable for moderate-frequency switching and amplification applications.

It operates efficiently within a temperature range of -65°C to 150°C, accommodating various industrial environments.

This model is designed for through-hole mounting, facilitating easy integration into PCB layouts.

The BD180G is a PNP transistor, making it suitable for specific amplification applications.

The maximum collector-emitter voltage for the BD180G is 80 V, allowing for robust operation in power control circuits.

It has a minimum DC current gain (hFE) of 15, ensuring effective current amplification.

The BD180G is housed in a TO-225 package, which is compact and suitable for PCB integration.

The maximum emitter-base voltage (VEBO) for the BD180G is 5 V, ensuring stable operation.

This transistor is suitable for general purpose PNP amplification applications and can be used in power amplification and signal processing circuits.

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