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STMicroelectronics STN3NF06 N-Channel Power MOSFET, 4 A, 60 V, Enhancement Mode, 4-Pin SOT-223
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | STN3NF06 |
| Width | 7mm |
| Mount Type | Surface |
| Series | STN3N |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.3W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports continuous drain current of 4 A for robust power applications.
- Maximum drain-source voltage rating of 60 V ensures operation in medium voltage ranges.
- Low on-resistance of 7 milliohms reduces power loss and heat dissipation.
- Enhancement mode channel type provides efficient switching capabilities.
- Surface mount SOT-223 package with 4 pins facilitates compact PCB integration.
- Maximum power dissipation of 3.3 W supports reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C suits various environments.
- Typical gate charge of 10 nC at Vgs aids fast switching speeds.
Product Description
The STMicroelectronics STN3NF06 is a high-performance N-channel Power MOSFET designed for applications requiring a continuous drain current rating of 4 A and voltage handling up to 60 V. Packaged in a space-saving 4-pin SOT-223 surface mount format, this MOSFET emphasizes low on-resistance characteristics and rugged avalanche capability, making it suitable for industrial, automotive, and power management uses.
Utilizing STMicroelectronics' proprietary Single Feature Size™ strip-based process, the device achieves exceptional packing density, leading to minimized conduction losses and enhanced manufacturability with consistent reproducibility. The transistor's enhancement mode channel provides efficient switching with a maximum gate-source voltage rating of 20 V, while the typical gate charge of 10 nC at Vgs supports rapid switching performance.
With a wide operating temperature range from -55°C to 150°C and a maximum power dissipation of 3.3 W, the STN3NF06 offers reliable operation under demanding thermal conditions. Its physical footprint of 6.5 mm length, 7 mm width, and 1.6 mm height aligns with compact circuit design constraints.
This MOSFET is ideal for power management circuits, DC-DC converters, automotive electronics, and various industrial control systems requiring efficient switching and robust voltage/current handling combined with a compact package.
Continuous drain current of 4 A to handle moderate power loads. Voltage rating of 60 V suitable for a range of medium-voltage applications. Low Rds(on) of 7 milliohms minimizes conduction losses. Compact SOT-223 package for space-efficient PCB layouts.
High temperature tolerance ensures reliability in harsh conditions. Enhanced avalanche ruggedness for robustness in transient events. Designed with ST’s Single Feature Size™ technology for manufacturing quality. Discover a broad selection of MOSFETs and power semiconductors at EnvMart to complement your electronic designs in industrial, automotive, and commercial sectors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A, making it suitable for moderate power loads.
The maximum drain-source voltage rating is 60 V, allowing operation in medium voltage applications.
The on-resistance (Rds(on)) is 7 milliohms, which helps to minimize conduction losses.
This model is packaged in a SOT-223 format, which is a surface mount package with 4 pins.
The operating temperature range is from -55°C to 150°C, suitable for various environmental conditions.
The maximum power dissipation is 3.3 W, which supports reliable thermal performance.
The typical gate charge at Vgs is 10 nC, which aids in achieving fast switching speeds.
The maximum gate-source voltage rating is 20 V, ensuring compatibility with various control signals.
The dimensions are 6.5 mm in length, 7 mm in width, and 1.6 mm in height, allowing for compact PCB integration.
This model uses an enhancement mode N-channel, which provides efficient switching capabilities.
It is suitable for power management circuits, DC-DC converters, automotive electronics, and various industrial control systems.
The country of origin for this MOSFET is India.
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