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STMicroelectronics PNP Power Transistor 10 A, 60 V, 75 W TO-220 3-Pin MJE2955T

Category Power Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 29.75mm
Length 10.4mm
Model MJE2955T
Width 4.6mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 5
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 70V
Maximum Power Dissipation Pd 75W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 2MHz
onsemi Transistor, -10 A PNP, -60 V, 3-Pin TO-220Brand onsemi

Key Features

  • Handles a maximum collector current of 10 amperes.
  • Maximum collector-emitter voltage rating of 60 volts.
  • Power dissipation up to 75 watts for high performance.
  • Designed with PNP transistor polarity and single transistor configuration.
  • Operates reliably in temperatures from 0°C up to 150°C.
  • Package type TO-220 ensures easy through-hole mounting.
  • Maximum collector-base voltage of 70 volts for enhanced control.
  • Minimum DC current gain of 5 for effective switching.

Product Description

STMicroelectronics MJE2955T is a robust PNP power transistor ideal for high current and high voltage applications in industrial, electronic, and power management systems. Featuring a maximum continuous collector current of 10 A and collector-emitter voltage rating of 60 V, it is built to handle demanding operating conditions.

This transistor employs a TO-220 3-pin package designed for through-hole mounting, providing reliable mechanical and thermal stability. Its maximum power dissipation of 75 W allows it to dissipate substantial heat, making it suitable for power control and amplification roles.

The device operates efficiently over a wide temperature range from 0°C to 150°C, ensuring durability in industrial and automotive environments where temperature fluctuations are common. It offers a minimum DC current gain (hFE) of 5 and a maximum transition frequency (ft) of 2 MHz, enabling stable and responsive switching performance.

Dimensions are precisely 29.75 mm height, 10.4 mm length, and 4.6 mm width, optimizing it for space-constrained circuit designs requiring PNP transistor functionality. 10 A maximum collector current supports high current loads.

60 V collector-emitter voltage suitable for versatile power circuits. 75 W power dissipation for thermal robustness. TO-220 3-pin package ensures easy installation and thermal management. Reliable operation from 0°C to 150°C supports diverse environments.

Single transistor configuration for straightforward applications. Maximum collector-base voltage of 70 V enhances device reliability. Minimum DC current gain of 5 enables effective control. Maximum emitter-base voltage of 5 V prevents breakdown.

Maximum transition frequency of 2 MHz for general purpose amplification.

This STMicroelectronics MJE2955T transistor is ideal for use in power amplification, power supply regulation, audio amplifier stages, and automotive electronics. The product combines electrical robustness with practical packaging, making it a preferred choice for engineers across semiconductor applications.

Explore the comprehensive range of STMicroelectronics bipolars and power transistor products at EnvMart for reliable industrial and electronic components solutions.

Explore more products in our Power Transistors category.

STMicroelectronics PNP Power Transistor 10 A, 60 V, 75 W TO-220 3-Pin MJE2955T
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Frequently Asked Questions

The maximum collector current for this model is 10 A.

It has a maximum collector-emitter voltage rating of 60 V.

This transistor can dissipate up to 75 W of power.

It operates reliably in temperatures from 0°C to 150°C.

The MJE2955T uses a TO-220 package type for through-hole mounting.

The minimum DC current gain (hFE) is 5.

The maximum collector-base voltage is 70 V.

The dimensions are 29.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

The maximum emitter-base voltage is 5 V.

The maximum transition frequency is 2 MHz.

It is designed with a single transistor configuration.

This transistor is suitable for power amplification, power supply regulation, audio amplifier stages, and automotive electronics.

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